MT29F8G08AAAWP-ET:ATR Micron Technology Inc, MT29F8G08AAAWP-ET:ATR Datasheet - Page 55

• Manufacturer Part Number: MT29F8G08AAAWP-ET:ATR
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08AAAWP-ET:ATR

• Cell Type: NAND
• Density: 8Gb
• Access Time (max): 18ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 30b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP-I
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 1G
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

Figure 53:
Figure 54:
PDF: 09005aef818a56a7 / Source: 09005aef81590bdd
2gb_nand_m29b__2.fm - Rev. I 1/06 EN
WE#
R/B#
I/Ox
CE#
ALE
RE#
CLE
AUTO BLOCK
ERASE SETUP
Command
BLOCK ERASE Operation
RESET Operation
WE#
R/B#
I/Ox
CE#
CLE
t WC
60h
Notes: 1. See Table 8 on page 27 for actual values.
Add 1
Row
Row Address
Add 2
Row
Command
RESET
Add 3
Row
FF
Command
t
ERASE
WB
D0h
t WB
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Busy
55
t BERS
t
RST
Micron Technology, Inc., reserves the right to change products or specifications without notice.
READ STATUS
Command
70h
Status
©2004 Micron Technology, Inc. All rights reserved.
Timing Diagrams
Don‘t Care