MT29F8G08AAAWP-ET:ATR Micron Technology Inc, MT29F8G08AAAWP-ET:ATR Datasheet - Page 43

• Manufacturer Part Number: MT29F8G08AAAWP-ET:ATR
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08AAAWP-ET:ATR

• Cell Type: NAND
• Density: 8Gb
• Access Time (max): 18ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 30b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP-I
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 1G
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

Figure 36:
Figure 37:
PDF: 09005aef818a56a7 / Source: 09005aef81590bdd
2gb_nand_m29b__2.fm - Rev. I 1/06 EN
R/B#
I/Ox
CE#
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I/Ox
CE#
CLE
INPUT DATA LATCH
SERIAL ACCESS Cycle After READ
Notes: 1. D
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Final = 2,111 (x8) or 1,055 (x16).
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2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
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D
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43
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1
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DH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
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Final 1
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©2004 Micron Technology, Inc. All rights reserved.
Timing Diagrams
Don‘t Care
Don‘t Care