CY7C1412KV18-333BZXI Cypress Semiconductor, CY7C1412KV18-333BZXI Datasheet - Page 16

• Manufacturer Part Number: CY7C1412KV18-333BZXI
• Description: SRAM 36MB (2Mx18) 1.8v 333MHz QDR II SRAM
• Manufacturer: Cypress Semiconductor

Specifications of CY7C1412KV18-333BZXI

• Rohs: yes
• Memory Size: 36 MB
• Organization: 2 M x 18
• Access Time: 30 ns
• Supply Voltage - Max: 1.9 V
• Supply Voltage - Min: 1.7 V
• Maximum Operating Current: 750 mA
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Package / Case: FBGA-165
• Factory Pack Quantity: 136

TAP Controller Block Diagram
TAP Electrical Characteristics
Over the Operating Range
Notes
Document Number: 001-57825 Rev. *F
Parameter
V
V
V
V
V
V
I
13. These characteristics pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the
14. Overshoot: V
15. All voltage referenced to Ground.
X
OH1
OH2
OL1
OL2
IH
IL
TDI
TCK
TMS
[13, 14, 15]
IH(AC)
< V
DDQ
Output HIGH voltage
Output HIGH voltage
Output LOW voltage
Output LOW voltage
Input HIGH voltage
Input LOW voltage
Input and output load current
Selection
Circuitry
+ 0.85 V (Pulse width less than t
Description
108
31
Boundary Scan Register
CYC
30
Identification Register
.
Instruction Register
/2), Undershoot: V
29
I
I
I
I
GND  V
OH
OH
OL
OL
.
= 2.0 mA
= 100 A
=2.0 mA
=100 A
TAP Controller
.
.
I
 V
.
.
IL(AC)
Test Conditions
DD
Bypass Register
2
2
2
>

1.5 V (Pulse width less than t
1
1
1
CY7C1412KV18, CY7C1414KV18
0
0
0
0
Electrical Characteristics on page
CYC
Selection
Circuitry
0.65 × V
/2).
–0.3
Min
1.4
1.6
–5
CY7C1425KV18
–
–
DD
0.35 × V
V
DD
Max
0.4
0.2
Page 16 of 33
–
–
5
+ 0.3
22.
TDO
DD
Unit
A
V
V
V
V
V
V