CY7C1412KV18-333BZXI Cypress Semiconductor, CY7C1412KV18-333BZXI Datasheet - Page 18

• Manufacturer Part Number: CY7C1412KV18-333BZXI
• Description: SRAM 36MB (2Mx18) 1.8v 333MHz QDR II SRAM
• Manufacturer: Cypress Semiconductor

Specifications of CY7C1412KV18-333BZXI

• Rohs: yes
• Memory Size: 36 MB
• Organization: 2 M x 18
• Access Time: 30 ns
• Supply Voltage - Max: 1.9 V
• Supply Voltage - Min: 1.7 V
• Maximum Operating Current: 750 mA
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Package / Case: FBGA-165
• Factory Pack Quantity: 136

TAP Timing and Test Conditions
Figure 3
Document Number: 001-57825 Rev. *F
Note
18. Test conditions are specified using the load in TAP AC Test Conditions. t
shows the TAP timing and test conditions.
TDO
Test Mode Select
TMS
Test Clock
TCK
Test Data In
TDI
Test Data Out
TDO
Z
0
= 50
(a)
GND
0.9V
Figure 3. TAP Timing and Test Conditions
C
50
L
= 20 pF
[18]
t
TMSS
t
TDIS
R
/t
F
= 1 ns.
t
t
TDOV
TH
0V
t
t
TL
TMSH
t
TDIH
CY7C1412KV18, CY7C1414KV18
1.8V
t
ALL INPUT PULSES
TDOX
0.9V
t
TCYC
CY7C1425KV18
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