CY7C1412KV18-333BZXI Cypress Semiconductor, CY7C1412KV18-333BZXI Datasheet - Page 27

• Manufacturer Part Number: CY7C1412KV18-333BZXI
• Description: SRAM 36MB (2Mx18) 1.8v 333MHz QDR II SRAM
• Manufacturer: Cypress Semiconductor

Specifications of CY7C1412KV18-333BZXI

• Rohs: yes
• Memory Size: 36 MB
• Organization: 2 M x 18
• Access Time: 30 ns
• Supply Voltage - Max: 1.9 V
• Supply Voltage - Min: 1.7 V
• Maximum Operating Current: 750 mA
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Package / Case: FBGA-165
• Factory Pack Quantity: 136

Switching Waveforms
Notes
Document Number: 001-57825 Rev. *F
36. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, that is, A0 + 1.
37. Outputs are disabled (high Z) one clock cycle after a NOP.
38. In this example, if address A0 = A1, then data Q00 = D10 and Q01 = D11. Write data is forwarded immediately as read results. This note applies to the whole diagram.
D10
A0
t KHCH
t KH
t KH
t SA t HA
D11
A1
t KHCH
t KL
t KL
t
t SA t HA
SC t
D30
A2
t HC
Figure 6. Read/Write/Deselect Sequence
t KHKH
t CQOH
t CLZ
t CO
t SD
t CYC
D31
A3
t HD
t CQOH
t CCQO
D50
A4
t CYC
Q00
t KHKH
t DOH
t CCQO
D51
A5
Q01
t CQDOH
t SD t HD
CY7C1412KV18, CY7C1414KV18
D60
Q20
[36, 37, 38]
t CQH
D61
A6
Q21
t CQD
DON’T CARE
Q40
CY7C1425KV18
t
t CQHCQH
CHZ
UNDEFINED
Q41
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