CY7C1412KV18-333BZXI Cypress Semiconductor, CY7C1412KV18-333BZXI Datasheet - Page 23

• Manufacturer Part Number: CY7C1412KV18-333BZXI
• Description: SRAM 36MB (2Mx18) 1.8v 333MHz QDR II SRAM
• Manufacturer: Cypress Semiconductor

Specifications of CY7C1412KV18-333BZXI

• Rohs: yes
• Memory Size: 36 MB
• Organization: 2 M x 18
• Access Time: 30 ns
• Supply Voltage - Max: 1.9 V
• Supply Voltage - Min: 1.7 V
• Maximum Operating Current: 750 mA
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Package / Case: FBGA-165
• Factory Pack Quantity: 136

Electrical Characteristics
Over the Operating Range
DC Electrical Characteristics
Over the Operating Range
Note
Document Number: 001-57825 Rev. *F
I
I
25. The operation current is calculated with 50% read cycle and 50% write cycle.
Parameter
DD
SB1
[25]
[21]
V
Automatic power-down
current
DD
operating supply
Description
(continued)
(continued)
V
f = f
Max V
both ports deselected,
V
f = f
Inputs Static
DD
IN
MAX
MAX
 V
= Max, I
DD
IH
= 1/t
= 1/t
,
or V
OUT
Test Conditions
CYC
CYC
IN
= 0 mA,
 V
,
IL
333 MHz (× 9)
300 MHz (× 9)
250 MHz (× 9)
333 MHz (× 9)
300 MHz (× 9)
250 MHz (× 9)
CY7C1412KV18, CY7C1414KV18
(× 18)
(× 36)
(× 18)
(× 36)
(× 18)
(× 36)
(× 18)
(× 36)
(× 18)
(× 36)
(× 18)
(× 36)
Min
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Typ
CY7C1425KV18
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max
730
750
910
680
700
850
590
610
730
280
280
280
270
270
270
260
260
260
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Unit
mA
mA
mA
mA
mA
mA