CY7C1412KV18-333BZXI Cypress Semiconductor, CY7C1412KV18-333BZXI Datasheet - Page 22

• Manufacturer Part Number: CY7C1412KV18-333BZXI
• Description: SRAM 36MB (2Mx18) 1.8v 333MHz QDR II SRAM
• Manufacturer: Cypress Semiconductor

Specifications of CY7C1412KV18-333BZXI

• Rohs: yes
• Memory Size: 36 MB
• Organization: 2 M x 18
• Access Time: 30 ns
• Supply Voltage - Max: 1.9 V
• Supply Voltage - Min: 1.7 V
• Maximum Operating Current: 750 mA
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Package / Case: FBGA-165
• Factory Pack Quantity: 136

Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................ –65 °C to +150 °C
Ambient temperature
with power applied ................................... –55 °C to +125 °C
Supply voltage on V
Supply voltage on V
DC applied to outputs in high Z ........ –0.5 V to V
DC input voltage
Current into outputs (LOW) ........................................ 20 mA
Static discharge voltage
(MIL-STD-883, M. 3015) ......................................... > 2001 V
Latch-up current .................................................... > 200 mA
Electrical Characteristics
Over the Operating Range
DC Electrical Characteristics
Over the Operating Range
Notes
Document Number: 001-57825 Rev. *F
V
V
V
V
V
V
V
V
I
I
V
19. Overshoot: V
20. Power-up: Assumes a linear ramp from 0 V to V
21. All voltage referenced to Ground.
22. Output are impedance controlled. I
23. Output are impedance controlled. I
24. V
Parameter
X
OZ
DD
DDQ
OH
OL
OH(LOW)
OL(LOW)
IH
IL
REF
REF(min)
= 0.68 V or 0.46 V
[21]
IH(AC)
Power supply voltage
I/O supply voltage
Output HIGH voltage
Output LOW voltage
Output HIGH voltage
Output LOW voltage
Input HIGH voltage
Input LOW voltage
Input leakage current
Output leakage current
Input reference voltage
[19]
< V
DD
DDQ
DDQ
........................... –0.5 V to V
relative to GND .......–0.5 V to +2.9 V
Description
relative to GND ...... –0.5 V to +V
+ 0.85 V (Pulse width less than t
DDQ
, whichever is larger, V
OH
OL
= (V
=

(V
DDQ
DDQ
/2)/(RQ/5) for values of 175
[24]
DD(min)
/2)/(RQ/5) for values of 175
Note 22
Note 23
I
I
GND  V
GND  V
Typical value = 0.75 V
REF(max)
OH
OL
within 200 ms. During this time V
DDQ
= 0.1 mA, nominal impedance
=0.1 mA, nominal impedance
DD
CYC
/2), Undershoot: V
+ 0.5 V
+ 0.5 V
= 0.95 V or 0.54 V
I
I
 V
 V
DD
Test Conditions
DDQ
DDQ,


 RQ  350
output disabled
 RQ 350
IL(AC)
DDQ
Operating Range
Neutron Soft Error Immunity
Commercial
Industrial
LSBU
LMBU
SEL
* No LMBU or SEL events occurred during testing; this column represents a
statistical 
Application Note
of Terrestrial Failure Rates”
Parameter
, whichever is smaller.
>
Range
IH



< V
.
1.5 V (Pulse width less than t
.
DD
CY7C1412KV18, CY7C1414KV18
2
, 95% confidence limit calculation. For more details refer to
and V
AN 54908 “Accelerated Neutron SER Testing and Calculation
Description
Single event
DDQ
single-bit
Temperature (T
Multi-Bit
Logical
Logical
latchup
–40 °C to +85 °C
upsets
upsets
0 °C to +70 °C
 V
V
V
DD
Ambient
V
DDQ
DDQ
V
DDQ
REF
.
–0.3
0.68
Min
V
1.7
1.4
/2 – 0.12
/2 – 0.12
5
5
SS
+ 0.1
– 0.2
CYC
Conditions Typ Max*
/2).
25 °C
25 °C
85 °C
A
Test
)
0.75
Typ
1.8
1.5
CY7C1425KV18
–
–
–
–
–
–
–
–
1.8 ± 0.1 V
V
DD
V
V
DDQ
DDQ
V
V
197
[20]
DDQ
REF
0
0
V
Max
0.95
V
1.9
/2 + 0.12
/2 + 0.12
0.2
DDQ
5
5
DD
– 0.1
Page 22 of 33
+ 0.3
0.01
216
0.1
V
1.4 V to
DDQ
V
DD
[20]
Unit
Unit
FIT/
FIT/
FIT/
Dev
Mb
Mb
A
A
V
V
V
V
V
V
V
V
V