CY7C1412KV18-333BZXI Cypress Semiconductor, CY7C1412KV18-333BZXI Datasheet - Page 31

• Manufacturer Part Number: CY7C1412KV18-333BZXI
• Description: SRAM 36MB (2Mx18) 1.8v 333MHz QDR II SRAM
• Manufacturer: Cypress Semiconductor

Specifications of CY7C1412KV18-333BZXI

• Rohs: yes
• Memory Size: 36 MB
• Organization: 2 M x 18
• Access Time: 30 ns
• Supply Voltage - Max: 1.9 V
• Supply Voltage - Min: 1.7 V
• Maximum Operating Current: 750 mA
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Package / Case: FBGA-165
• Factory Pack Quantity: 136

Acronyms
Document Number: 001-57825 Rev. *F
DDR
FBGA
HSTL
I/O
JTAG
LSB
MSB
PLL
QDR
SRAM
TAP
TCK
TMS
TDI
TDO
Acronym
double data rate
fine-pitch ball grid array
high-speed transceiver logic
input/output
joint test action group
least significant bit
most significant bit
phase locked loop
quad data rate
static random access memory
test access port
test clock
test mode select
test data-in
test data-out
Description
Document Conventions
Units of Measure
°C
MHz
µA
µs
mA
mm
ms
ns

%
pF
V
W
Symbol
CY7C1412KV18, CY7C1414KV18
degree Celsius
megahertz
microampere
microsecond
milliampere
millimeter
millisecond
nanosecond
ohm
percent
picofarad
volt
watt
Unit of Measure
CY7C1425KV18
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