CY7C1412KV18-333BZXI Cypress Semiconductor, CY7C1412KV18-333BZXI Datasheet - Page 17

• Manufacturer Part Number: CY7C1412KV18-333BZXI
• Description: SRAM 36MB (2Mx18) 1.8v 333MHz QDR II SRAM
• Manufacturer: Cypress Semiconductor

Specifications of CY7C1412KV18-333BZXI

• Rohs: yes
• Memory Size: 36 MB
• Organization: 2 M x 18
• Access Time: 30 ns
• Supply Voltage - Max: 1.9 V
• Supply Voltage - Min: 1.7 V
• Maximum Operating Current: 750 mA
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Package / Case: FBGA-165
• Factory Pack Quantity: 136

TAP AC Switching Characteristics
Over the Operating Range
Document Number: 001-57825 Rev. *F
Notes
Parameter
t
t
t
t
Setup Times
t
t
t
Hold Times
t
t
t
Output Times
t
t
16. t
17. Test conditions are specified using the load in TAP AC Test Conditions. t
TCYC
TF
TH
TL
TMSS
TDIS
CS
TMSH
TDIH
CH
TDOV
TDOX
CS
and t
CH
[16, 17]
refer to the setup and hold time requirements of latching data from the boundary scan register.
TCK clock cycle time
TCK clock frequency
TCK clock HIGH
TCK clock LOW
TMS setup to TCK clock rise
TDI setup to TCK clock rise
Capture setup to TCK rise
TMS hold after TCK clock rise
TDI hold after clock rise
Capture hold after clock rise
TCK clock LOW to TDO valid
TCK clock LOW to TDO invalid
Description
R
/t
F
= 1 ns.
CY7C1412KV18, CY7C1414KV18
Min
50
20
20
CY7C1425KV18
–
5
5
5
5
5
5
–
0
Max
20
10
Page 17 of 33
–
–
–
–
–
–
–
–
–
–
Unit
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns