CY7C1412KV18-333BZXI Cypress Semiconductor, CY7C1412KV18-333BZXI Datasheet - Page 9

• Manufacturer Part Number: CY7C1412KV18-333BZXI
• Description: SRAM 36MB (2Mx18) 1.8v 333MHz QDR II SRAM
• Manufacturer: Cypress Semiconductor

Specifications of CY7C1412KV18-333BZXI

• Rohs: yes
• Memory Size: 36 MB
• Organization: 2 M x 18
• Access Time: 30 ns
• Supply Voltage - Max: 1.9 V
• Supply Voltage - Min: 1.7 V
• Maximum Operating Current: 750 mA
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Package / Case: FBGA-165
• Factory Pack Quantity: 136

Functional Overview
The CY7C1425KV18, CY7C1412KV18, and CY7C1414KV18
are synchronous pipelined burst SRAMs with a read port and a
write port. The read port is dedicated to read operations and the
write port is dedicated to write operations. Data flows into the
SRAM through the write port and flows out through the read port.
These devices multiplex the address inputs to minimize the
number of address pins required. By having separate read and
write ports, the QDR II completely eliminates the need to turn
around the data bus and avoids any possible data contention,
thereby simplifying system design. Each access consists of two
9-bit data transfers in the case of CY7C1425KV18, two 18-bit
data transfers in the case of CY7C1412KV18, and two 36-bit
data transfers in the case of CY7C1414KV18 in one clock cycle.
This device operates with a read latency of one and half cycles
when DOFF pin is tied HIGH. When DOFF pin is set LOW or
connected to V
a read latency of one clock cycle.
Accesses for both ports are initiated on the rising edge of the
positive input clock (K). All synchronous input timing is
referenced from the rising edge of the input clocks (K and K) and
all output timing is referenced to the output clocks (C and C, or
K and K when in single clock mode).
All synchronous data inputs (D
controlled by the input clocks (K and K). All synchronous data
outputs (Q
rising edge of the output clocks (C and C, or K and K when in
single clock mode).
All synchronous control (RPS, WPS, BWS
through input registers controlled by the rising edge of the input
clocks (K and K).
CY7C1412KV18 is described in the following sections. The
same basic descriptions apply to CY7C1425KV18, and
CY7C1414KV18.
Read Operations
The CY7C1412KV18 is organized internally as two arrays of
1 M × 18. Accesses are completed in a burst of two sequential
18-bit data words. Read operations are initiated by asserting
RPS active at the rising edge of the positive input clock (K). The
address is latched on the rising edge of the K clock. The address
presented to the address inputs is stored in the read address
register. Following the next K clock rise, the corresponding
lowest order 18-bit word of data is driven onto the Q
C as the output timing reference. On the subsequent rising edge
of C, the next 18-bit data word is driven onto the Q
requested data is valid 0.45 ns from the rising edge of the output
clock (C and C or K and K when in single clock mode).
Synchronous internal circuitry automatically tristates the outputs
following the next rising edge of the output clocks (C/C). This
enables for a seamless transition between devices without the
insertion of wait states in a depth expanded memory.
Write Operations
Write operations are initiated by asserting WPS active at the
rising edge of the positive input clock (K). On the same K clock
rise the data presented to D
Document Number: 001-57825 Rev. *F
[x:0]
) pass through output registers controlled by the
SS
then the device behaves in QDR I mode with
[17:0]
[x:0]
is latched and stored into the
) pass through input registers
[x:0]
) inputs pass
[17:0]
[17:0]
using
. The
lower 18-bit write data register, provided BWS
asserted active. On the subsequent rising edge of the negative
input clock (K), the address is latched and the information
presented to D
provided BWS
are then written into the memory array at the specified location.
When deselected, the write port ignores all inputs after the
pending write operations are completed.
Byte Write Operations
Byte write operations are supported by the CY7C1412KV18. A
write operation is initiated as described in the
section. The bytes that are written are determined by BWS
BWS
Asserting the appropriate byte write select input during the data
portion of a write latches the data being presented and writes it
into the device. Deasserting the byte write select input during the
data portion of a write enables the data stored in the device for
that byte to remain unaltered. This feature is used to simplify
read, modify, or write operations to a byte write operation.
Concurrent Transactions
The read and write ports on the CY7C1412KV18 operate
completely independently of one another. As each port latches
the address inputs on different clock edges, the user can read or
write to any location, regardless of the transaction on the other
port. The user can start reads and writes in the same clock cycle.
If the ports access the same location at the same time, the SRAM
delivers the most recent information associated with the
specified address location. This includes forwarding data from a
write cycle that was initiated on the previous K clock rise.
Depth Expansion
The CY7C1412KV18 has a port select input for each port. This
enables for easy depth expansion. Both port selects are sampled
on the rising edge of the positive input clock only (K). Each port
select input can deselect the specified port. Deselecting a port
does not affect the other port. All pending transactions (read and
write) are completed before the device is deselected.
Programmable Impedance
An external resistor, RQ, must be connected between the ZQ pin
on the SRAM and V
driver impedance. The value of RQ must be 5X the value of the
intended line impedance driven by the SRAM. The allowable
range of RQ to guarantee impedance matching with a tolerance
of ±15% is between 175  and 350 
output impedance is adjusted every 1024 cycles upon power-up
to account for drifts in supply voltage and temperature.
Echo Clocks
Echo clocks are provided on the QDR II to simplify data capture
on high speed systems. Two echo clocks are generated by the
QDR II. CQ is referenced with respect to C and CQ is referenced
with respect to C. These are free running clocks and are
synchronized to the output clock of the QDR II. In the single clock
mode, CQ is generated with respect to K and CQ is generated
with respect to K. The timing for the echo clocks is shown in
Switching Characteristics on page
1
, which are sampled with each set of 18-bit data words.
CY7C1412KV18, CY7C1414KV18
[1:0]
[17:0]
are both asserted active. The 36 bits of data
SS
is also stored into the write data register,
to enable the SRAM to adjust its output
25.
CY7C1425KV18
,
with V
Write Operations
DDQ
[1:0]
Page 9 of 33
= 1.5 V. The
are both
0
and