DF2170BVTE33V Renesas Electronics America, DF2170BVTE33V Datasheet - Page 555

• Manufacturer Part Number: DF2170BVTE33V
• Description: IC H8S/2170 MCU FLASH 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2170BVTE33V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: SCI, USB
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 76
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• For Use With: HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)3DK2166 - DEV EVAL KIT H8S/2166
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Data Converters: -

18.4
18.4.1
Table 18.11 Flash Memory Characteristics
Conditions: V
Notes: 1. The programming and erase time depends on the data.
Item
Programming time*
Erase time*
Rewrite times (total)*
Erase time (total)*
Programming and erase time
(total)*
Count of rewriting
Data hold time*
1,
2. The programming and erase time does not include the data transfer time.
3. The minimum times that all characteristics after rewriting are guaranteed. (A range
4. Data hold characteristics when rewriting is performed within the range of specifications
*
2,
Flash Memory Characteristics
Flash Memory Characteristics
*
4
between 1 and minimum value is guaranteed.)
including minimum value.
1,
*
2,
CC
*
4
4
= 3.0 V to 3.6 V, V
1,
*
1,
2,
*
1,
*
2,
*
4
*
2,
4
*
4
Symbol
t
t
Σ
Σ
Σ
N
t
P
E
DRP
tP
tE
tPE
WEC
SS
= 0 V
Min.







100*
10
3
Typ.
3
80
500
1000 10000
5
5
10


Max.
30
800
5000
15
15
30


Unit
ms/128 bytes
ms/4 kbytes
ms/32 kbytes
ms/64 kbytes
s/256 kbytes
s/256 kbytes
s/256 kbytes
Times
Year
Rev. 2.00, 03/04, page 521 of 534
Test
Conditions
Ta = 25°C
Ta = 25°C
Ta = 25°C