ATA6613P-PLQW Atmel, ATA6613P-PLQW Datasheet - Page 307

• Manufacturer Part Number: ATA6613P-PLQW
• Description: MCU W/LIN TXRX REG WTCHDG 48-QFN
• Manufacturer: Atmel
• Series: AVR® ATA66 LIN-SBCr

Specifications of ATA6613P-PLQW

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 16MHz
• Connectivity: I²C, LIN, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 23
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 512 x 8
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 48-QFN Exposed Pad
• Processor Series: ATA6x
• Core: AVR8
• Data Bus Width: 8 bit
• Data Ram Size: 1 KB
• Interface Type: I2C, SPI, USART
• Maximum Clock Frequency: 16 MHz
• Number Of Programmable I/os: 23
• Number Of Timers: 3
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 8 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6.24.7.2
6.24.7.3
6.24.7.4
9111H–AUTO–01/11
Considerations for Efficient Programming
Chip Erase
Programming the Flash
The loaded command and address are retained in the device during programming. For effi-
cient programming, the following should be considered.
The Chip Erase will erase the Flash and EEPROM
are not reset until the program memory has been completely erased. The Fuse bits are not
changed. A Chip Erase must be performed before the Flash and/or EEPROM are
reprogrammed.
Note:
Load Command “Chip Erase”
The Flash is organized in pages (see
Flash, the program data is latched into a page buffer. This allows one page of program data to
be programmed simultaneously. The following procedure describes how to program the entire
Flash memory:
A. Load Command “Write Flash”
B. Load Address Low byte
• The command needs only be loaded once when writing or reading multiple memory
• Skip writing the data value 0xFF, that is the contents of the entire EEPROM (unless the
• Address high byte needs only be loaded before programming or reading a new 256 word
1. Set XA1, XA0 to “10”. This enables command loading.
2. Set BS1 to “0”.
3. Set DATA to “1000 0000”. This is the command for Chip Erase.
4. Give XTAL1 a positive pulse. This loads the command.
5. Give WR a negative pulse. This starts the Chip Erase. RDY/BSY goes low.
6. Wait until RDY/BSY goes high before loading a new command.
1. Set XA1, XA0 to “10”. This enables command loading.
2. Set BS1 to “0”.
3. Set DATA to “0001 0000”. This is the command for Write Flash.
4. Give XTAL1 a positive pulse. This loads the command.
1. Set XA1, XA0 to “00”. This enables address loading.
2. Set BS1 to “0”. This selects low address.
3. Set DATA = Address low byte (0x00 - 0xFF).
4. Give XTAL1 a positive pulse. This loads the address low byte.
locations.
EESAVE Fuse is programmed) and Flash after a Chip Erase.
window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes
reading.
1. The EEPRPOM memory is preserved during Chip Erase if the EESAVE Fuse is
programmed.
Table 6-123 on page
Atmel ATA6612/ATA6613
(1)
memories plus Lock bits. The Lock bits
306). When programming the
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