D12363VTE33 Renesas Electronics America, D12363VTE33 Datasheet - Page 787

• Manufacturer Part Number: D12363VTE33
• Description: MCU 3V 0K 120-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of D12363VTE33

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: I²C, IrDA, SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 84
• Program Memory Type: ROMless
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 10x10b, D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 120-TQFP, 120-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Program Memory Size: -
• Other names: HD6412363VTE33; HD6412363VTE33

• Flash program and erase frequency control (FPEFEQ)
• Flash vector address control register (FVACR)
There are several operating modes for accessing flash memory, for example, read mode/program
mode.
There are two memory MATs: user MAT and user boot MAT. The dedicated registers/parameters
are allocated for each operating mode and MAT selection. The correspondence of operating modes
and registers/parameters for use is shown in table 20.3.
Table 20.3 Register/Parameter and Target Mode
Programming/erasing
interface register
Programming/erasing
interface parameter
Notes: 1. The setting is required when programming or erasing user MAT in user boot mode.
2. The setting may be required according to the combination of initiation mode and read
target MAT.
FCCS
FPCS
FECS
FKEY
FMATS
FTDAR
DPFR
FPFR
FPEFEQ
FUBRA
FMPAR
FMPDR
FEBS
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Section 20 Flash Memory (0.18-μm F-ZTAT Version)
Initiali-
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Rev.6.00 Mar. 18, 2009 Page 727 of 980
Program-
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Erasure
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REJ09B0050-0600
Read
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