D12363VTE33 Renesas Electronics America, D12363VTE33 Datasheet - Page 804

MCU 3V 0K 120-TQFP

D12363VTE33

Manufacturer Part Number
D12363VTE33
Description
MCU 3V 0K 120-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet

Specifications of D12363VTE33

Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
84
Program Memory Type
ROMless
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 10x10b, D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
120-TQFP, 120-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Program Memory Size
-
Other names
HD6412363VTE33
HD6412363VTE33

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
D12363VTE33V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 20 Flash Memory (0.18-μm F-ZTAT Version)
(4)
When flash memory is erased, the erase-block number on the user MAT must be passed to the
erasing program which is downloaded. This is set to the FEBS parameter (general register ER0).
One block is specified from the block number 0 to 15.
For details on the erasing processing procedure, see section 20.4.2, User Program Mode.
(a) Flash erase block select parameter (FEBS: general register ER0 of CPU)
This parameter specifies the erase-block number.
Bit
31 to 8
7 to 0
Rev.6.00 Mar. 18, 2009 Page 744 of 980
REJ09B0050-0600
Erasure Execution
Bit
Name
EBN7 to 0 ⎯
Initial
Value
R/W
R/W
Note: * For the H8S/2362F, H8S/2361F, and H8S/2360F
Description
Unused
These bits should be cleared to H'0.
Erase Block Number
Set an erase-block number within the range from 0 to 15.
H'00 corresponds to the EB0 block and H'0F corresponds
to the EB15 block. An error occurs if a number outside
the range from H'00 to H'0F * is set
choose a setting value within the range from H'00
to H'0B.
For the H8S/2364F, choose a setting value within
the range from H'00 to H'0D.

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