M306N4FGTFP Renesas Electronics America, M306N4FGTFP Datasheet - Page 307

• Manufacturer Part Number: M306N4FGTFP
• Description: IC M16C MCU FLASH 100QFP
• Manufacturer: Renesas Electronics America
• Series: M16C™ M16C/6Nr

Specifications of M306N4FGTFP

• Core Processor: M16C/60
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: CAN, I²C, IEBus, SIO, UART/USART
• Peripherals: DMA, WDT
• Number Of I /o: 85
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 10K x 8
• Voltage - Supply (vcc/vdd): 4.2 V ~ 5.5 V
• Data Converters: A/D 26x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-QFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

M16C/6N Group (M16C/6N4)
Rev.2.40
REJ09B0009-0240
21.7 Electrical Characteristics
Table 21.9 Flash Memory Version Electrical Characteristics
NOTES:
Table 21.10 Flash Memory Version Program/Erase Voltage and Read Operation Voltage Characteristics
-
-
-
-
-
tps
VCC = 5.0 ± 0.5 V
Symbol
21.7.1 Electrical Characteristics (T/V-ver.)
Table 21.9 lists the Flash Memory Electrical Characteristics. Table 21.10 lists the Flash Memory Version
Program/Erase Voltage and Read Operation Voltage Characteristics.
1. Referenced to VCC = 4.5 to 5.5 V, Topr = 0 to 60°C unless otherwise specified.
2. Programming and erasure endurance refers to the number of times a block erase can be performed.
3. n denotes the number of block erases.
If the programming and erasure endurance is n (n = 100), each block can be erased n times.
For example, if a 4-Kbyte block A is erased after writing 1 word data 2,048 times, each to a different
address, this counts as one programming and erasure endurance. Data cannot be written to the same
address more than once without erasing the block (rewrite prohibited).
Apr 14, 2006
Programming and erasure endurance
Word program time (VCC = 5.0 V)
Lock bit program time
Block erase time
(VCC = 5.0 V)
Erase all unlocked blocks time
Flash memory circuit stabilization wait time
Flash Program, Erase Voltage
(at Topr = 0 to 60 °C)
page 283 of 376
Parameter
4-Kbyte block
8-Kbyte block
32-Kbyte block
64-Kbyte block
(2)
VCC = 4.2 to 5.5 V
Flash Read Operation Voltage
(1)
Min.
100
Standard
Typ.
0.3
0.3
0.5
0.8
25
25
21. Flash Memory Version
4 ✕ n
Max.
200
200
15
4
4
4
4
(3)
cycle
Unit
µs
µs
µs
s
s
s
s
s