MC68908GZ8MFAE Freescale Semiconductor, MC68908GZ8MFAE Datasheet - Page 42
![IC MCU 8BIT 8K FLASH 48-LQFP](/photos/37/62/376278/tqfp-48_sml.jpg)
MC68908GZ8MFAE
Manufacturer Part Number
MC68908GZ8MFAE
Description
IC MCU 8BIT 8K FLASH 48-LQFP
Manufacturer
Freescale Semiconductor
Series
HC08r
Datasheet
1.MC68908GZ8CFJER.pdf
(314 pages)
Specifications of MC68908GZ8MFAE
Core Processor
HC08
Core Size
8-Bit
Speed
8MHz
Connectivity
CAN, LIN, SCI, SPI
Peripherals
LVD, POR, PWM
Number Of I /o
37
Program Memory Size
8KB (8K x 8)
Program Memory Type
FLASH
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
48-LQFP
Processor Series
M689xx
Core
HC08
Data Bus Width
8 bit
Data Ram Size
1 KB
Interface Type
SPI, SCI, CAN
Maximum Clock Frequency
8 MHz
Number Of Programmable I/os
37
Number Of Timers
2
Operating Supply Voltage
5.5 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Development Tools By Supplier
FSICEBASE, M68CBL05AE, DEMO908GZ60E, M68EML08GZE
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 16 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Details
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- Download datasheet (5Mb)
Memory
This program sequence is repeated throughout the memory until all data is programmed.
42
10. Clear the PGM bit.
11. Wait for a time, t
12. Clear the HVEN bit.
13. After time, t
Programming and erasing of FLASH locations can not be performed by
code being executed from the same FLASH array.
While these operations must be performed in the order shown, other
unrelated operations may occur between the steps. Care must be taken
within the FLASH array memory space such as the COP control register
(COPCTL) at $FFFF.
It is highly recommended that interrupts be disabled during program/ erase
operations.
Do not exceed t
cumulative high voltage programming time to the same row before next
erase. t
Refer to
The time between programming the FLASH address change (step 7 to step
7), or the time between the last FLASH programmed to clearing the PGM
bit (step 7 to step 10) must not exceed the maximum programming time,
t
Be cautious when programming the FLASH array to ensure that
non-FLASH locations are not used as the address that is written to when
selecting either the desired row address range in step 3 of the algorithm or
the byte to be programmed in step 7 of the algorithm. This applies
particularly to $FFD4–$FFDF.
PROG
RCV
maximum.
HV
(typical 1 μs), the memory can be accessed in read mode again.
NVH
21.15 Memory
(1)
must satisfy this condition:
t
(minimum 5 μs).
NVS
MC68HC908GZ16 • MC68HC908GZ8 Data Sheet, Rev. 4
PROG
+ t
NVH
maximum or t
Characteristics.
+ t
PGS
+ (t
CAUTION
NOTE
NOTE
NOTE
NOTE
NOTE
PROG
HV
maximum. t
x 32)
≤
t
HV
HV
maximum
is defined as the
Freescale Semiconductor
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