PIC24FJ64GB002-I/SS Microchip Technology, PIC24FJ64GB002-I/SS Datasheet - Page 61

16-bit, 16 MIPS, 64KB Flash, 8KB RAM, Nanowatt XLP, USB OTG 28 SSOP .209in TUBE

PIC24FJ64GB002-I/SS

Manufacturer Part Number
PIC24FJ64GB002-I/SS
Description
16-bit, 16 MIPS, 64KB Flash, 8KB RAM, Nanowatt XLP, USB OTG 28 SSOP .209in TUBE
Manufacturer
Microchip Technology

Specifications of PIC24FJ64GB002-I/SS

Processor Series
PIC24
Core
PIC24F
Data Bus Width
16 bit
Program Memory Type
Flash
Program Memory Size
64 KB
Data Ram Size
8192 B
Interface Type
I2C, SPI, UART
Maximum Clock Frequency
32 MHz
Number Of Programmable I/os
21
Number Of Timers
5
Operating Supply Voltage
2 V to 3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Package / Case
SSOP-28
Development Tools By Supplier
MPLAB Integrated Development Environment
Minimum Operating Temperature
- 40 C
Operating Temperature Range
- 40 C to + 85 C
Supply Current (max)
300 mA
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PIC24FJ64GB002-I/SS
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
Part Number:
PIC24FJ64GB002-I/SS
0
5.6.2
If a Flash location has been erased, it can be pro-
grammed using table write instructions to write an
instruction word (24-bit) into the write latch. The
TBLPAG register is loaded with the 8 Most Significant
Bytes of the Flash address. The TBLWTL and TBLWTH
EXAMPLE 5-7:
EXAMPLE 5-8:
 2010 Microchip Technology Inc.
; Setup a pointer to data Program Memory
; Setup NVMCON for programming one word to data Program Memory
// C example using MPLAB C30
//Set up NVMCON for word programming
//Set up pointer to the first memory location to be written
//Perform TBLWT instructions to write latches
MOV
MOV
MOV
MOV
MOV
TBLWTL W2, [W0]
TBLWTH W3, [W0++]
MOV
MOV
DISI
MOV
MOV
MOV
MOV
BSET
NOP
NOP
unsigned int offset;
unsigned long progAddr = 0xXXXXXX;
unsigned int progDataL = 0xXXXX;
unsigned char progDataH = 0xXX;
NVMCON = 0x4003;
TBLPAG = progAddr>>16;
offset = progAddr & 0xFFFF;
__builtin_tblwtl(offset, progDataL);
__builtin_tblwth(offset, progDataH);
asm(“DISI #5”);
__builtin_write_NVM();
PROGRAMMING A SINGLE WORD
OF FLASH PROGRAM MEMORY
#tblpage(PROG_ADDR), W0
W0, TBLPAG
#tbloffset(PROG_ADDR), W0
#LOW_WORD, W2
#HIGH_BYTE, W3
#0x4003, W0
W0, NVMCON
#5
#0x55, W0
W0, NVMKEY
#0xAA, W0
W0, NVMKEY
NVMCON, #WR
PROGRAMMING A SINGLE WORD OF FLASH PROGRAM MEMORY –
ASSEMBLY LANGUAGE CODE
PROGRAMMING A SINGLE WORD OF FLASH PROGRAM MEMORY –
‘C’ LANGUAGE CODE
PIC24FJ64GB004 FAMILY
;
;Initialize PM Page Boundary SFR
;Initialize a register with program memory address
;
;
; Write PM low word into program latch
; Write PM high byte into program latch
;
; Set NVMOP bits to 0011
; Disable interrupts while the KEY sequence is written
; Write the key sequence
; Start the write cycle
; Insert two NOPs after the erase
; Command is asserted
// Address of word to program
// Data to program lower word
// Data to program upper byte
// Initialize NVMCON
// Initialize PM Page Boundary SFR
// Initialize lower word of address
// Write to address low word
// Write to upper byte
// Block interrupts with priority < 7
// for next 5 instructions
// C30 function to perform unlock
// sequence and set WR
instructions write the desired data into the write latches
and specify the lower 16 bits of the program memory
address to write to. To configure the NVMCON register
for a word write, set the NVMOP bits (NVMCON<3:0>)
to ‘0011’. The write is performed by executing the
unlock sequence and setting the WR bit (see
Example 5-7).
DS39940D-page 61

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