R4F24278NVFQU Renesas Electronics America, R4F24278NVFQU Datasheet - Page 1165

• Manufacturer Part Number: R4F24278NVFQU
• Description: MCU 512K/48K 2.7-5.5V 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2400r

Specifications of R4F24278NVFQU

• Core Processor: H8S/2600
• Core Size: 16/32-Bit
• Speed: 33MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, Smart Card, SPI, SSU, UART/USART
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 98
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Eeprom Size: -
• Ram Size: 64K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

H8S/2427, H8S/2427R, H8S/2425 Group
The flash memory in this LSI can be manipulated in four programming modes: user program
mode, boot mode, user boot mode, and programmer mode.
Table 23.1 gives an overview of the flash memory specifications (refer to section 1, Overview, for
items that are not shown in table 23.1).
Table 23.1 Overview of Flash Memory Specifications
Notes: 1. The programming and erase count determine the number of times the erase operation
REJ09B0565-0100 Rev. 1.00
Jul 22, 2010
Item
Flash memory programming modes
Erase block division
Programming method
Erase method
Programming and erase control method
Number of commands
Programming and erase count
Data retention
2. 10,000 times for the data flash and 1,000 times for other blocks.
can be performed in each block.
For example, if 1-word programming is done 2,048 times, each at a different address in
a 4-Kbyte block and then the block is erased, this is counted as one programming and
erase count. If the allowed programming and erase count is 1,000 times, each block
can be erased 1,000 times.
User ROM
Data flash
User boot ROM
Section 23 Flash Memory
Description
Four modes (user program mode, boot mode, user
boot mode, and programmer mode)
See figure 23.2.
Word units
Block units
Programming and erasure are controlled by
software commands
Eight commands
1,000 times/10,000 times*
Ten years
1
*
2
Section 23 Flash Memory
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