R4F24278NVFQU Renesas Electronics America, R4F24278NVFQU Datasheet - Page 270

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R4F24278NVFQU

Manufacturer Part Number
R4F24278NVFQU
Description
MCU 512K/48K 2.7-5.5V 144-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2400r
Datasheet

Specifications of R4F24278NVFQU

Core Processor
H8S/2600
Core Size
16/32-Bit
Speed
33MHz
Connectivity
EBI/EMI, I²C, IrDA, SCI, Smart Card, SPI, SSU, UART/USART
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
98
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Eeprom Size
-
Ram Size
64K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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Part Number
Manufacturer
Quantity
Price
Part Number:
R4F24278NVFQU
Manufacturer:
REALTEK
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2 300
Part Number:
R4F24278NVFQU
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 7 Bus Controller (BSC)
7.7.11
With DRAM, in addition to full access (normal access) in which data is accessed by outputting a
row address for each access, a fast page mode is also provided which can be used when making
consecutive accesses to the same row address. This mode enables fast (burst) access of data by
simply changing the column address after the row address has been output. Burst access can be
selected by setting the BE bit to 1 in DRAMCR.
(1)
Figures 7.42 and 7.43 show the operation timing for burst access. When there are consecutive
access cycles for DRAM space, the CAS signal and column address output cycles (two states)
continue as long as the row address is the same for consecutive access cycles. The row address
used for the comparison is set with bits MXC2 to MXC0 in DRAMCR.
Page 240 of 1448
Burst Access (Fast Page Mode)
Burst Operation
(Address shift size
set to 10 bits)
This LSI
Figure 7.41 Example of 2-CAS DRAM Connection
RASn (CSn)
HWR (WE)
D15 to D0
RD (OE)
UCAS
LCAS
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
1-Mbyte × 16-bit configuration
RAS
UCAS
LCAS
WE
OE
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
D15 to D0
2-CAS type 16-Mbit DRAM
10-bit column address
H8S/2427, H8S/2427R, H8S/2425 Group
Row address input:
A9 to A0
Column address input:
A9 to A0
REJ09B0565-0100 Rev. 1.00
Jul 22, 2010

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