MT46V128M8 MICRON [Micron Technology], MT46V128M8 Datasheet - Page 10

• Manufacturer Part Number: MT46V128M8
• Description: DOUBLE DATA RATE (DDR) SDRAM
• Manufacturer: MICRON [Micron Technology]

Table 1:
09005aef8076894f
1gbDDRx4x8x16_2.fm - Rev. A 3/03 EN
6, 12, 52, 58, 64
3, 9, 15, 55, 61
NUMBERS
11, 56, 59,
34, 48, 66
5, 11, 56,
1, 18, 33
2, 5, 8,
14, 25,
62, 65
43, 53
19, 50
TSOP
62
51
16
51
49
Ball/Pin Descriptions (Continued)
DQ0–DQ2
DQ3–DQ5
DQ6, DQ7
DQ0–DQ2
SYMBOL
UDQS
V
LDQS
V
DNU
DQ3
DQS
V
V
V
NC
DD
SS
REF
DD
SS
Q
Q
Supply
Supply
Supply
Supply
Supply
TYPE
I/O
I/O
I/O
–
–
DESCRIPTION
Data Input/Output: Data bus for x8
(DQ4–DQ7 are NC for the x4)
Data Input/Output: Data bus for x4
Data Strobe: Output with read data, input with write data. DQS is edge-
aligned with read data, centered in write data. It is used to capture data.
For the x16, LDQS is DQS for DQ0–DQ7 and UDQS is DQS for DQ8–DQ15.
Pin 16 (E7) is NC on x4 and x8.
No Connect: These pins should be left unconnected.
Do Not Use: Must float to minimize noise on V
DQ Power Supply: +2.5V ±0.2V. Isolated on the die for improved noise
immunity.
DQ Ground. Isolated on the die for improved noise immunity.
Power Supply: +2.5V ±0.2V.
Ground.
SSTL_2 reference voltage.
10
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1Gb: x4, x8, x16
REF
.
DDR SDRAM
PRELIMINARY
©2003 Micron Technology. Inc.