MT46V128M8 MICRON [Micron Technology], MT46V128M8 Datasheet - Page 26

• Manufacturer Part Number: MT46V128M8
• Description: DOUBLE DATA RATE (DDR) SDRAM
• Manufacturer: MICRON [Micron Technology]

NOTE:
09005aef8076894f
1gbDDRx4x8x16_2.fm - Rev. A 3/03 EN
1. DO n = data-out from column n.
2. DI b = data-in from column b.
3. Burst length = 4 in the cases shown (applies for bursts of 8 as well; if the burst length is 2, the BST command shown can be NOP).
4. One subsequent element of data-out appears in the programmed order following DO n.
5. Data-in elements are applied following DI b in the programmed order.
6. Shown with nominal
7. BST = BURST TERMINATE command, page remains open.
COMMAND
COMMAND
ADDRESS
ADDRESS
DQS
DQS
CK#
DM
CK#
DM
DQ
DQ
CK
CK
Bank a,
READ
Bank,
READ
Col n
Col n
T0
T0
t
AC,
t
DQSCK, and
CL = 2
CL = 2.5
BST
BST
T1
T1
7
7
t
DQSQ.
Figure 16: READ to WRITE
NOP
NOP
T2
T2
DO
n
26
T2n
T2n
DO
n
WRITE
Bank,
Col b
NOP
T3
T3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
(NOM)
DON’T CARE
DQSS
WRITE
T4
NOP
T4
DI
b
t
(NOM)
TRANSITIONING DATA
DQSS
T4n
1Gb: x4, x8, x16
DDR SDRAM
T5
T5
NOP
NOP
DI
b
PRELIMINARY
©2003 Micron Technology. Inc.
T5n
T5n