MT46V128M8 MICRON [Micron Technology], MT46V128M8 Datasheet - Page 23

• Manufacturer Part Number: MT46V128M8
• Description: DOUBLE DATA RATE (DDR) SDRAM
• Manufacturer: MICRON [Micron Technology]

NOTE:
09005aef8076894f
1gbDDRx4x8x16_2.fm - Rev. A 3/03 EN
1. DO n (or b) = data-out from column n (or column b).
2. Burst length = 4 or 8 (if 4, the bursts are concatenated; if 8, the second burst interrupts the first).
3. Three subsequent elements of data-out appear in the programmed order following DO n.
4. Three (or seven) subsequent elements of data-out appear in the programmed order following DO b.
5. Shown with nominal
6. Example applies when READ commands are issued to different devices or nonconsecutives READS
COMMAND
COMMAND
COMMAND
ADDRESS
ADDRESS
ADDRESS
DQS
DQS
CK#
CK#
DQ
DQ
CK
CK
READ
Bank,
READ
Bank,
Col n
Col n
T0
T0
t
AC,
t
DQSCK, and
Figure 13: Nonconsecutive READ Bursts
CL = 2
NOP
NOP
T1
T1
CL = 2.5
t
DQSQ.
NOP
NOP
T2
T2
DO
n
T2n
T2n
23
DO
n
READ
Bank,
READ
Bank,
Col b
Col b
T3
T3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T3n
T3n
DON’T CARE
T4
NOP
T4
NOP
1Gb: x4, x8, x16
TRANSITIONING DATA
T5
T5
DDR SDRAM
NOP
NOP
DO
PRELIMINARY
b
©2003 Micron Technology. Inc.
T5n
T5n
DO
b
T6
T6
NOP
NOP