MT46V128M8 MICRON [Micron Technology], MT46V128M8 Datasheet - Page 22

• Manufacturer Part Number: MT46V128M8
• Description: DOUBLE DATA RATE (DDR) SDRAM
• Manufacturer: MICRON [Micron Technology]

NOTE:
09005aef8076894f
1gbDDRx4x8x16_2.fm - Rev. A 3/03 EN
1. DO n (or b) = data-out from column n (or column b).
2. Burst length = 4 or 8 (if 4, the bursts are concatenated; if 8, the second burst interrupts the first).
3. Three subsequent elements of data-out appear in the programmed order following DO n.
4. Three (or seven) subsequent elements of data-out appear in the programmed order following DO b.
5. Shown with nominal
6. Example applies only when READ commands are issued to same device.
COMMAND
COMMAND
COMMAND
ADDRESS
ADDRESS
ADDRESS
DQS
DQS
CK#
CK#
DQ
DQ
CK
CK
READ
Bank,
READ
Bank,
Col n
Col n
T0
T0
t
AC,
t
DQSCK, and
Figure 12: Consecutive READ Bursts
CL = 2
NOP
NOP
T1
T1
CL = 2.5
t
DQSQ.
READ
Bank,
READ
Bank,
Col b
Col b
T2
T2
DO
n
22
T2n
T2n
DO
n
T3
NOP
T3
NOP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DON’T CARE
T3n
T3n
T4
T4
NOP
NOP
DO
b
TRANSITIONING DATA
T4n
T4n
1Gb: x4, x8, x16
DO
b
DDR SDRAM
T5
T5
NOP
NOP
PRELIMINARY
©2003 Micron Technology. Inc.
T5n
T5n