MT46H64M16LFBF-6 IT:B Micron Technology Inc, MT46H64M16LFBF-6 IT:B Datasheet - Page 23

• Manufacturer Part Number: MT46H64M16LFBF-6 IT:B
• Description: 64MX16 MOBILE DDR SDRAM PLASTIC IND TEMP GREEN VFBGA 1.8V
• Manufacturer: Micron Technology Inc

Specifications of MT46H64M16LFBF-6 IT:B

• Lead Free Status / RoHS Status: Compliant

Table 6: 1.2V I/O AC/DC Electrical Characteristics and Operating Conditions
Notes 1–5 apply to all parameters/conditions in this table; V
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1gb_ddr_mobile_sdram_t68m.pdf - Rev. E 12/10 EN
Parameter/Condition
Supply voltage
I/O supply voltage
Address and command inputs
Input voltage high
Input voltage low
Clock inputs (CK, CK#)
DC input voltage
DC input differential voltage
AC input differential voltage
AC differential crossing voltage
Data inputs
DC input high voltage
DC input low voltage
AC input high voltage
AC input low voltage
Data outputs
DC output high voltage: Logic 1 (I
DC output low voltage: Logic 0 (I
Leakage current
Input leakage current
Any input 0V ≤ V
(All other pins not under test = 0V)
Output leakage current
(DQ are disabled; 0V ≤ V
Operating temperature
Commercial
Industrial
Automotive
IN
≤ V
DD
OUT
≤ V
DDQ
OL
OH
)
= 0.1mA)
= –0.1mA)
Symbol
V
V
V
V
V
V
V
V
V
V
ID(DC)
ID(AC)
IH(DC)
IH(AC)
V
V
V
IL(DC)
IL(AC)
V
I
T
T
T
DDQ
OZ
OH
I
DD
OL
IH
IN
IX
A
A
A
IL
I
DD
23
/V
DDQ
0.9 × V
0.4 × V
0.6 × V
0.4 × V
0.8 × V
0.9 × V
0.9 × V
= 1.70–1.95V
1Gb: x16, x32 Mobile LPDDR SDRAM
Min
1.70
1.14
–0.2
–0.2
–0.2
–0.2
–40
–40
Micron Technology, Inc. reserves the right to change products or specifications without notice.
–1
–5
0
–
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
V
0.1 × V
V
V
V
0.6 × V
V
0.2 × V
V
0.1 × V
0.1 × V
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
Max
Electrical Specifications
1.95
1.30
105
70
85
–
1
5
+ 0.2
+ 0.2
+ 0.4
+ 0.4
+ 0.2
+ 0.2
DDQ
DDQ
DDQ
DDQ
DDQ
© 2009 Micron Technology, Inc. All rights reserved.
Unit
μA
μA
˚C
˚C
˚C
V
V
V
V
V
V
V
V
V
V
V
V
V
V
8, 9, 13
8, 9, 13
8, 9, 13
8, 9, 13
Notes
10, 11
10, 11
10, 12
6, 7
6, 7
8, 9
8, 9
10