MT46H64M16LFBF-6 IT:B Micron Technology Inc, MT46H64M16LFBF-6 IT:B Datasheet - Page 93

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MT46H64M16LFBF-6 IT:B

Manufacturer Part Number
MT46H64M16LFBF-6 IT:B
Description
64MX16 MOBILE DDR SDRAM PLASTIC IND TEMP GREEN VFBGA 1.8V
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT46H64M16LFBF-6 IT:B

Lead Free Status / RoHS Status
Compliant
Figure 51: Bank Write – Without Auto Precharge
Command
PDF: 09005aef83d9bee4
1gb_ddr_mobile_sdram_t68m.pdf - Rev. E 12/10 EN
BA0, BA1
Address
DQS
DQ
CK#
CKE
A10
DM
CK
6
t
t
IS
IS
NOP
T0
t
t
IH
1
IH
Notes:
t
t
IS
ACTIVE
Bank x
IS
Row
Row
T1
t
t
IH
IH
t
CK
1. NOP commands are shown for ease of illustration; other commands may be valid at
2. BL = 4 in the case shown.
3. PRE = PRECHARGE.
4. Disable auto precharge.
5. Bank x at T8 is “Don’t Care” if A10 is HIGH at T8.
6. D
these times.
t
OUT
t
RCD
RAS
NOP
n = data-out from column n.
T2
1
t
CH
t
CL
t
WRITE
Bank x
Note 4
IS
Col n
t
WPRES
T3
t
t
IH
DQSS (NOM)
2
93
t
DS
NOP
T4
D
t
b
DH
IN
t
WPRE
1
1Gb: x16, x32 Mobile LPDDR SDRAM
T4n
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
DQSL
NOP
T5
t
1
DQSH
T5n
t
WPST
NOP
T6
1
Don’t Care
© 2009 Micron Technology, Inc. All rights reserved.
Auto Precharge
t
NOP
WR
T7
1
Transitioning Data
One bank
All banks
Bank x
T8
PRE
3
5
t
RP

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