MT46H64M16LFBF-6 IT:B Micron Technology Inc, MT46H64M16LFBF-6 IT:B Datasheet - Page 49

• Manufacturer Part Number: MT46H64M16LFBF-6 IT:B
• Description: 64MX16 MOBILE DDR SDRAM PLASTIC IND TEMP GREEN VFBGA 1.8V
• Manufacturer: Micron Technology Inc

Specifications of MT46H64M16LFBF-6 IT:B

• Lead Free Status / RoHS Status: Compliant

Table 20: Truth Table – Current State Bank n – Command to Bank m
Notes 1–6 apply to all parameters in this table
PDF: 09005aef83d9bee4
1gb_ddr_mobile_sdram_t68m.pdf - Rev. E 12/10 EN
Current State
Any
Idle
Row activating,
active, or pre-
charging
Read (auto pre-
charge disabled)
Write (auto pre-
charge disabled)
Read (with auto
precharge)
Write (with auto
precharge)
CS#
H
X
Notes:
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
RAS#
H
H
H
H
H
H
H
H
H
H
H
X
X
L
L
L
L
L
L
L
L
L
L
1. This table applies when CKE
2. This table describes alternate bank operation, except where noted (for example, the cur-
3. Current state definitions:
the previous state was self refresh), after
down) or after a full initialization (if the previous state was deep power-down).
rent state is for bank n and the commands shown are those supported for issue to bank
m, assuming that bank m is in such a state that the given command is supported). Excep-
tions are covered in the notes below.
Idle: The bank has been precharged, and
Row active: A row in the bank has been activated, and
accesses and no register accesses are in progress.
Read: A READ burst has been initiated and has not yet terminated or been terminated.
Write: A WRITE burst has been initiated and has not yet terminated or been terminated.
3a. Both the read with auto precharge enabled state or the write with auto precharge
enabled state can be broken into two parts: the access period and the precharge period.
For read with auto precharge, the precharge period is defined as if the same burst was
CAS#
X
H
X
H
H
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
L
L
WE#
X
H
X
H
H
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
L
L
Command/Action
DESELECT (NOP/continue previous operation)
NO OPERATION (NOP/continue previous operation)
Any command supported to bank m
ACTIVE (select and activate row)
READ (select column and start READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE
ACTIVE (select and activate row)
READ (select column and start new READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE
ACTIVE (select and activate row)
READ (select column and start READ burst)
WRITE (select column and start new WRITE burst)
PRECHARGE
ACTIVE (select and activate row)
READ (select column and start new READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE
ACTIVE (select and activate row)
READ (select column and start READ burst)
WRITE (select column and start new WRITE burst)
PRECHARGE
49
n - 1
was HIGH, CKE
1Gb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
XP has been met (if the previous state was power-
t
RP has been met.
n
is HIGH and after
t
RCD has been met. No data bursts/
© 2009 Micron Technology, Inc. All rights reserved.
t
XSR has been met (if
Truth Tables
Notes
7
7