MT46H64M16LFBF-6 IT:B Micron Technology Inc, MT46H64M16LFBF-6 IT:B Datasheet - Page 29

• Manufacturer Part Number: MT46H64M16LFBF-6 IT:B
• Description: 64MX16 MOBILE DDR SDRAM PLASTIC IND TEMP GREEN VFBGA 1.8V
• Manufacturer: Micron Technology Inc

Specifications of MT46H64M16LFBF-6 IT:B

• Lead Free Status / RoHS Status: Compliant

Table 12: I
Notes 1–5, 7, and 12 apply to all the parameters/conditions in this table; V
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1gb_ddr_mobile_sdram_t68m.pdf - Rev. E 12/10 EN
Parameter/Condition
Self refresh:
CKE = LOW;
are stable; Data bus inputs are stable
DD6
t
CK =
Specifications and Conditions
t
CK (MIN); Address and control inputs
Notes:
10. CKE must be active (HIGH) during the entire time a REFRESH command is executed.
11. This limit is a nominal value and does not result in a fail. CKE is HIGH during REFRESH
12. Values for I
13. Typical values at 25˚C, not a maximum value.
14. Self refresh is not supported for AT (85˚C to 105˚C) operation.
1. All voltages referenced to V
2. Tests for I
3. Timing and I
4. I
5. I
6. MIN (
7. Measurement is taken 500ms after entering into this operating mode to provide settling
8. V
9. I
related specifications and device operation are guaranteed for the full voltage range
specified.
but input timing is still referenced to V
output timing reference voltage level is V
minimum cycle time with the outputs open.
aged at the defined cycle rate.
minimum absolute value for the respective parameter.
the largest multiple of
time for the tester.
From the time the AUTO REFRESH command is registered, CKE must be active at each
rising clock edge until
command period (
ues are estimated.
DD
DD
DD2N
DD
is dependent on output loading and cycle rates. Specified values are obtained with
specifications are tested after the device is properly initialized and values are aver-
must not vary more than 4% if CKE is not active while any bank is active.
t
specifies DQ, DQS, and DM to be driven to a valid high or low logic level.
RC or
DD
DD6
t
characteristics may be conducted at nominal supply voltage levels, but the
DD
RFC) for I
85˚C are guaranteed for the entire temperature range. All other I
tests may use a V
t
RFC (MIN)) else CKE is LOW (for example, during standby).
DD
t
t
RFC later.
CK that meets the maximum absolute value for
measurements is the smallest multiple of
29
SS
Full array, 105˚C
Electrical Specifications – I
1/16 array, 85˚C
1/16 array, 45˚C
Full array, 85˚C
Full array, 45˚C
1/2 array, 85˚C
1/2 array, 45˚C
1/4 array, 85˚C
1/4 array, 45˚C
1/8 array, 85˚C
1/8 array, 45˚C
.
IL
-to-V
1Gb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
IH
DDQ/2
DD
swing of up to 1.5V in the test environment,
DDQ/2
/V
DDQ
(or to the crossing point for CK/CK#). The
.
= 1.70–1.95V
Symbol
I
DD6
t
RASmax for I
© 2009 Micron Technology, Inc. All rights reserved.
Value
t
n/a
1300
1000
CK that meets the
450
350
900
300
800
250
800
250
DD
DD
14
measurements is
t
Parameters
RAS.
Units
DD6
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
val-