MT46H64M16LFBF-6 IT:B Micron Technology Inc, MT46H64M16LFBF-6 IT:B Datasheet - Page 35

• Manufacturer Part Number: MT46H64M16LFBF-6 IT:B
• Description: 64MX16 MOBILE DDR SDRAM PLASTIC IND TEMP GREEN VFBGA 1.8V
• Manufacturer: Micron Technology Inc

Specifications of MT46H64M16LFBF-6 IT:B

• Lead Free Status / RoHS Status: Compliant

PDF: 09005aef83d9bee4
1gb_ddr_mobile_sdram_t68m.pdf - Rev. E 12/10 EN
23. This is not a device limit. The device will operate with a negative value, but system per-
24. It is recommended that DQS be valid (HIGH or LOW) on or before the WRITE command.
25. The maximum limit for this parameter is not a device limit. The device will operate with
26. At least 1 clock cycle is required during
27. For the automotive temperature parts,
28. Clock must be toggled a minimum of two times during the
formance could be degraded due to bus turnaround.
The case shown (DQS going from High-Z to logic low) applies when no WRITEs were pre-
viously in progress on the bus. If a previous WRITE was in progress, DQS could be HIGH
during this time, depending on
a greater value for this parameter, but system performance (bus turnaround) will de-
grade accordingly.
Electrical Specifications – AC Operating Conditions
35
t
DQSS.
1Gb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
t
WR time when in auto precharge mode.
REF =
t
REF/2 and
t
REFI =
t
XSR period.
© 2009 Micron Technology, Inc. All rights reserved.
t
REFI/2.