MT46H64M16LFBF-6 IT:B Micron Technology Inc, MT46H64M16LFBF-6 IT:B Datasheet - Page 68

• Manufacturer Part Number: MT46H64M16LFBF-6 IT:B
• Description: 64MX16 MOBILE DDR SDRAM PLASTIC IND TEMP GREEN VFBGA 1.8V
• Manufacturer: Micron Technology Inc

Specifications of MT46H64M16LFBF-6 IT:B

• Lead Free Status / RoHS Status: Compliant

Figure 28: Nonconsecutive READ Bursts
PDF: 09005aef83d9bee4
1gb_ddr_mobile_sdram_t68m.pdf - Rev. E 12/10 EN
Command
Command
Address
Address
DQS
DQS
CK#
CK#
DQ
DQ
CK
CK
Notes:
READ
Bank,
READ
Bank,
Col n
Col n
T0
T0
1. D
2. BL = 4, 8, or 16 (if burst is 8 or 16, the second burst interrupts the first).
3. Shown with nominal
4. Example applies when READ commands are issued to different devices or nonconsecu-
tive READs.
OUT
CL = 2
NOP
NOP
T1
T1
n (or b) = data-out from column n (or column b).
CL = 3
T1n
T1n
D
n
OUT
NOP
NOP
T2
1
T2
t
AC,
D
n + 1
OUT
T2n
T2n
68
t
DQSCK, and
D
D
n + 2
READ
Bank,
READ
Bank,
OUT
Col b
Col b
OUT
n
T3
T3
1Gb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
D
n + 1
D
n + 3
T3n
T3n
t
DQSQ.
OUT
OUT
CL = 2
D
n + 2
T4
T4
NOP
NOP
OUT
Don’t Care
CL = 3
D
n + 3
T4n
T4n
OUT
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T5
T5
NOP
NOP
D
OUT
READ Operation
b
Transitioning Data
T5n
T5n
D
b + 1
OUT
T6
T6
NOP
NOP
D
D
b + 2
OUT
OUT
b