MT46H64M16LFBF-6 IT:B Micron Technology Inc, MT46H64M16LFBF-6 IT:B Datasheet - Page 24

no-image

MT46H64M16LFBF-6 IT:B

Manufacturer Part Number
MT46H64M16LFBF-6 IT:B
Description
64MX16 MOBILE DDR SDRAM PLASTIC IND TEMP GREEN VFBGA 1.8V
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT46H64M16LFBF-6 IT:B

Lead Free Status / RoHS Status
Compliant
Table 7: Capacitance (x16, x32)
Note 1 applies to all the parameters in this table
PDF: 09005aef83d9bee4
1gb_ddr_mobile_sdram_t68m.pdf - Rev. E 12/10 EN
Parameter
Input capacitance: CK, CK#
Delta input capacitance: CK, CK#
Input capacitance: command and address
Delta input capacitance: command and address
Input/output capacitance: DQ, DQS, DM
Delta input/output capacitance: DQ, DQS, DM
Notes:
1. This parameter is sampled. V
2. The input capacitance per pin group will not differ by more than this maximum amount
3. The I/O capacitance per DQS and DQ byte/group will not differ by more than this maxi-
1.30V), f = 100 MHz, T
is grouped with I/O pins, reflecting the fact that they are matched in loading.
for any given device.
mum amount for any given device.
A
= 25˚C, V
Symbol
24
C
C
C
C
C
DCK
C
DIO
CK
DI
IO
DD
I
/V
OUT(DC)
DDQ
1Gb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
= 1.70–1.95V (1.2V I/O option V
Min
= V
1.5
1.5
2.0
DDQ
/2, V
OUT
Max
Electrical Specifications
0.25
3.0
3.0
0.5
4.5
0.5
(peak-to-peak) = 0.2V. DM input
© 2009 Micron Technology, Inc. All rights reserved.
Unit
pF
pF
pF
pF
pF
pF
DD
/V
DDQ
= 1.14–
Notes
2
2
3

Related parts for MT46H64M16LFBF-6 IT:B