MT46H64M16LFBF-6 IT:B Micron Technology Inc, MT46H64M16LFBF-6 IT:B Datasheet - Page 91

• Manufacturer Part Number: MT46H64M16LFBF-6 IT:B
• Description: 64MX16 MOBILE DDR SDRAM PLASTIC IND TEMP GREEN VFBGA 1.8V
• Manufacturer: Micron Technology Inc

Specifications of MT46H64M16LFBF-6 IT:B

• Lead Free Status / RoHS Status: Compliant

Figure 49: Bank Read – Without Auto Precharge
PDF: 09005aef83d9bee4
1gb_ddr_mobile_sdram_t68m.pdf - Rev. E 12/10 EN
Case 2:
Case 1:
Command
BA0, BA1
Address
DQ
DQ
DQS
DQS
t
t
AC (MAX) and
CK#
CKE
A10
DM
AC (MIN) and
CK
7,8
7,8
7
7
t
t
IS
IS
NOP
T0
t
t
DQSCK (MIN)
DQSCK (MAX)
t
t
1
IH
IH
Notes:
t
ACTIVE
Bank x
IS
t
IS
Row
Row
T1
t
IH
t
IH
1. NOP commands are shown for ease of illustration; other commands may be valid at
2. BL = 4 in the case shown.
3. PRE = PRECHARGE.
4. Disable auto precharge.
5. Bank x at T5 is “Don’t Care” if A10 is HIGH at T5.
6. The PRECHARGE command can only be applied at T5 if
7. Refer to Figure 33 (page 73) and Figure 34 (page 74) for DQS and DQ timing details.
8. D
t
CK
t
t
t
RCD
RAS
RC
these times.
OUT
NOP
6
T2
n = data out from column n.
1
t
CH
t
CL
Bank x
READ
t
Note 4
t
Col n
IS
LZ (MIN)
T3
t
2
IH
CL = 2
t
RPRE
t
t
AC (MIN)
LZ (MIN)
NOP
T4
91
1
t
AC (MAX)
D
t
OUT
RPRE
n
t
One bank
DQSCK (MIN)
All banks
1Gb: x16, x32 Mobile LPDDR SDRAM
Bank x
D
n + 1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
PRE
OUT
T5
D
t
OUT
DQSCK (MAX)
n
3
5
D
n + 2
T5n
OUT
D
n + 1
OUT
D
n + 3
NOP
t
OUT
T6
RPST
D
n + 2
OUT
Don’t Care
1
t
RP
T6n
t
HZ (MAX)
t
D
n + 3
RPST
OUT
t
RAS (MIN) is met.
NOP
T7
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1
Transitioning Data
Auto Precharge
ACTIVE
Bank x
Row
Row
T8