MT46H64M16LFBF-6 IT:B Micron Technology Inc, MT46H64M16LFBF-6 IT:B Datasheet - Page 87

• Manufacturer Part Number: MT46H64M16LFBF-6 IT:B
• Description: 64MX16 MOBILE DDR SDRAM PLASTIC IND TEMP GREEN VFBGA 1.8V
• Manufacturer: Micron Technology Inc

Specifications of MT46H64M16LFBF-6 IT:B

• Lead Free Status / RoHS Status: Compliant

Figure 47: WRITE-to-PRECHARGE – Odd Number of Data, Interrupting
PDF: 09005aef83d9bee4
1gb_ddr_mobile_sdram_t68m.pdf - Rev. E 12/10 EN
Command
Address
DQS
DQS
DQS
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
DM
DM
DM
DQ
DQ
DQ
CK#
5, 6
5, 6
5, 6
CK
1
7
6
7
6
7
6
WRITE
Bank a,
Col b
T0
Notes:
2
t
t
t
DQSS
DQSS
DQSS
1. An interrupted burst of 8 is shown; one data element is written.
2. A10 is LOW with the WRITE command (auto precharge is disabled).
3. PRE = PRECHARGE.
4.
5. DQS is required at T4 and T4n to register DM.
6. If a burst of 4 is used, DQS and DM are not required at T3, T3n, T4, and T4n.
7. D
D
b
IN
t
WR is referenced from the first positive CK edge after the last data-in pair.
NOP
D
IN
T1
b
IN
b = data-in for column b.
D
b
IN
T1n
NOP
T2
T2n
87
T3
NOP
1Gb: x16, x32 Mobile LPDDR SDRAM
t
WR
Micron Technology, Inc. reserves the right to change products or specifications without notice.
T3n
4
NOP
T4
Don’t Care
T4n
(a or all)
T5
PRE
Bank
© 2009 Micron Technology, Inc. All rights reserved.
3
WRITE Operation
Transitioning Data
T6
NOP