TMP86C993XB(EYZ) Toshiba, TMP86C993XB(EYZ) Datasheet - Page 192

• Manufacturer Part Number: TMP86C993XB(EYZ)
• Description: EMULATION CHIP FOR TMP86F SSOP
• Manufacturer: Toshiba
• Series: -r

Specifications of TMP86C993XB(EYZ)

• Accessory Type: Adapter
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• For Use With/related Products: TMP86F SSOP
• Other names: TMP86C993XB; TMP86C993XB

18.2
Command Sequence
Table 18-1 Command Sequence
18.2
1
2
3
4
5
6
18.2.1
18.2.2
Command Sequence
Security Program
Product ID Entry
(4-kbyte Erase)
Product ID Exit
Product ID Exit
as shown in Table 18-1. Addresses specified in the command sequence are recognized with the lower 12 bits (excluding
BA, SA, and FF7FH used for security program). The upper 4 bits are used to specify the flash memory area,
Byte program
Sector Erase
Chip Erase
(All Erase)
The command sequence in the MCU and the serial PROM modes consists of six commands (JEDEC compatible),
Note 1: Set the address and data to be written.
Note 2: The area to be erased is specified with the upper 4 bits of the address.
Command Sequence
in the 4th bus write cycle. Each byte can be programmed in a maximum of 40 μs. The next command sequence
cannot be executed until the write operation is completed. To check the completion of the write operation, perform
read operations repeatedly until the same data is read twice from the same address in the flash memory. During
the write operation, any consecutive attempts to read from the same address is reversed bit 6 of the data (toggling
between 0 and 1).
by the upper 4 bits of the 6th bus write cycle address. For example, to erase 4 kbytes from F000H to FFFFH,
specify one of the addresses in F000H-FFFFH as the 6th bus write cycle. The sector erase command is effective
only in the MCU and serial PROM modes, and it cannot be used in the parallel PROM mode.
erase operation is completed. To check the completion of the erase operation, perform read operations repeatedly
for data polling until the same data is read twice from the same address in the flash memory. During the erase
operation, any consecutive attempts to read from the same address is reversed bit 6 of the data (toggling between
0 and 1).
This command writes the flash memory for each byte unit. The addresses and data to be written are specified
This command erases the flash memory in units of 4 kbytes. The flash memory area to be erased is specified
A maximum of 30 ms is required to erase 4 kbytes. The next command sequence cannot be executed until the
Byte Program
Sector Erase (4-kbyte Erase)
Note:To rewrite data to Flash memory addresses at which data (including FFH) is already written, make sure
to erase the existing data by "sector erase" or "chip erase" before rewriting data.
1st Bus Write Cycle 2nd Bus Write Cycle 3rd Bus Write Cycle 4th Bus Write Cycle 5th Bus Write Cycle 6th Bus Write Cycle
Address
555H
555H
555H
555H
555H
555H
XXH
Data
AAH
AAH
AAH
AAH
AAH
AAH
F0H
Address
AAAH
AAAH
AAAH
AAAH
AAAH
AAAH
-
Data
55H
55H
55H
55H
55H
55H
-
Address
Page 178
555H
555H
555H
555H
555H
555H
-
Data
A0H
80H
80H
90H
F0H
A5H
-
Address
(Note 1)
FF7FH
555H
555H
BA
-
-
-
(Note 1)
Data
Data
AAH
AAH
00H
-
-
-
Address
AAAH
AAAH
-
-
-
-
-
TMP86FH92DMG
Data
55H
55H
-
-
-
-
-
Address
(Note 2)
555H
SA
-
-
-
-
-
Data
30H
10H
-
-
-
-
-