TMP86C993XB(EYZ) Toshiba, TMP86C993XB(EYZ) Datasheet - Page 195

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TMP86C993XB(EYZ)

Manufacturer Part Number
TMP86C993XB(EYZ)
Description
EMULATION CHIP FOR TMP86F SSOP
Manufacturer
Toshiba
Series
-r
Datasheet

Specifications of TMP86C993XB(EYZ)

Accessory Type
Adapter
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
For Use With/related Products
TMP86F SSOP
Other names
TMP86C993XB
TMP86C993XB
18.4
18.4.1
performed in the entire flash memory area. Therefore, to perform these operations in the entire flash memory area,
access to the flash memory area by the control program in the BOOTROM or RAM area. (The flash memory program
cannot write to the flash memory.) The serial PROM or MCU mode is used to run the control program in the BOOT-
ROM or RAM area.
18.4.1.1
Note 1: The flash memory can be written or read for each byte unit. Erase operations can be performed either in the entire
Note 2: To rewrite data to Flash memory addresses at which data (including FFH) is already written, make sure to erase
When the write, erase and security program are set in the flash memory, read and fetch operations cannot be
Access to the Flash Memory Area
ROM area. Since almost of all operations relating to access to the flash memory can be controlled simply by the
communication data of the serial interface (UART), these functions are transparent to the user. For the details of
the serial PROM mode, see “Serial PROM Mode.”
command to execute the control program in the RAM area. The procedures to execute the control program in the
RAM area is shown in "18.4.1.1 How to write to the flash memory by executing the control program in the RAM
area (in the RAM loader mode within the serial PROM mode)".
The serial PROM mode is used to access to the flash memory by the control program provided in the BOOT-
To access to the flash memory by using peripheral functions in the serial PROM mode, run the RAM loader
Flash Memory Control in the Serial PROM Mode
executed in the RAM area.)
area or in units of 4 kbytes, whereas read operations can be performed by an one transfer instruction. However,
the command sequence method is adopted for write and erase operations, requiring several-byte transfer instruc-
tions for each operation.
the existing data by "sector erase" or "chip erase" before rewriting data.
loader mode within the serial PROM mode)
Note 1: Before writing to the flash memory in the RAM area, disable interrupts by setting the interrupt master
Note 2: Since the watchdog timer is disabled by the BOOTROM in the RAM loader mode, it is not required to
(Steps 1 and 2 are controlled by the BOOTROM, and steps 3 through 9 are controlled by the control program
How to write to the flash memory by executing the control program in the RAM area (in the RAM
1. Transfer the write control program to the RAM area in the RAM loader mode.
2. Jump to the RAM area.
3. Disable (DI) the interrupt master enable flag (IMF←"0").
4. Set FLSCR<FLSMD> to "0011B" (to enable command sequence execution).
5. Execute the erase command sequence.
6. Read the same flash memory address twice.
7. Execute the write command sequence.
8. Read the same flash memory address twice.
9. Set FLSCR<FLSMD> to "1100B" (to disable command sequence execution).
enable flag (IMF) to "0". Usually disable interrupts by executing the DI instruction at the head of the write
control program in the RAM area.
disable the watchdog timer by the RAM loader program.
(Repeat step 6 until the same data is read by two consecutive reads operations.)
(Repeat step 8 until the same data is read by two consecutive reads operations.)
Page 181
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