AT32AP7001-ALUT Atmel, AT32AP7001-ALUT Datasheet - Page 537

• Manufacturer Part Number: AT32AP7001-ALUT
• Description: IC MCU 32BIT AVR32 208-LQFP
• Manufacturer: Atmel
• Series: AVR®32 AP7r

Specifications of AT32AP7001-ALUT

• Core Processor: AVR
• Core Size: 32-Bit
• Speed: 150MHz
• Connectivity: EBI/EMI, I²C, MMC, PS2, SPI, SSC, UART/USART, USB
• Peripherals: AC'97, DMA, I²C, POR, PWM, WDT
• Number Of I /o: 90
• Program Memory Type: ROMless
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 1.65 V ~ 1.95 V
• Data Converters: D/A 2x16b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 208-LQFP
• Data Bus Width: 32 bit
• Data Ram Size: 32 KB
• Interface Type: EBI, ISI, MCI, PS2, SPI, TWI, USB
• Maximum Clock Frequency: 150 MHz
• Number Of Programmable I/os: 90
• Number Of Timers: 3
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• On-chip Dac: 16 bit, 1 Channel
• Package: 208PQFP
• Device Core: AVR32
• Family Name: AT32
• Maximum Speed: 150 MHz
• Operating Supply Voltage: 1.8 V
• For Use With: ATAVRONEKIT - KIT AVR/AVR32 DEBUGGER/PROGRMMRATNGW100 - KIT AVR32 NETWORK GATEWAYATSTK1000 - KIT STARTER FOR AVR32AP7000
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -
• Lead Free Status / Rohs Status: Details

Figure 29-4. SDRAM Device Initialization Sequence
29.7.2
32015G–AVR32–09/09
SDRAMC_A[12:11]
SDRAMC_A[9:0]
SDCKE
SDWE
SDCK
SDCS
RAS
CAS
DQM
SDRAM Controller Write Cycle
A10
Inputs Stable for
200 usec
10. The user must go into Normal Mode, writing the value 0 to the MR.MODE field and per-
11. Write the refresh rate into the Refresh Timer Count field in the Refresh Timer Register
After initialization, the SDRAM devices are fully functional.
The SDRAMC allows burst access or single access. In both cases, the SDRAMC keeps track of
the active row in each bank, thus maximizing performance. To initiate a burst access, the
SDRAMC uses the transfer type signal provided by the master requesting the access. If the next
access is a sequential write access, writing to the SDRAM device is carried out. If the next
access is a write-sequential access, but the current access is to a boundary page, or if the next
access is in another row, then the SDRAMC generates a precharge command, activates the
new row and initiates a write command. To comply with SDRAM timing parameters, additional
clock cycles are inserted between precharge and active (t
and write (t
29.8.3. This is described in
Precharge All Banks
write address must be chosen so that BA[1] or BA[0] are equal to one. See
29.8.1
forming a write access at any location in the SDRAM.
(TR.COUNT). The refresh rate is the delay between two successive refresh cycles. The
SDRAM device requires a refresh every 15.625µs or 7.81µs. With a 100MHz frequency,
the TR register must be written with the value 1562 (15.625 µs x 100 MHz) or 781 (7.81
µs x 100 MHz).
for details about Extended Load Mode Register command.
RCD
) commands. For definition of these timing parameters, refer to the
t
RP
1st Auto Refresh
Figure 29-5 on page
8th Auto Refresh
538.
t
RC
RP
) commands and between active
LMR Command
AT32AP7001
t
MRD
Section
Valid Command
Section
537