DF2398F20V Renesas Electronics America, DF2398F20V Datasheet - Page 178

• Manufacturer Part Number: DF2398F20V
• Description: IC H8S/2300 MCU FLASH 128QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2398F20V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 87
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 128-QFP
• For Use With: YR0K42378FC000BA - KIT EVAL FOR H8S/2378
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

When the RCW bit is set to 1, RAS signal output is delayed by one cycle. The width of the RAS signal should be adjusted
with bits RLW1 and RLW0. These bits are only enabled in refresh operations.
Figure 6-26 shows the timing when the RCW bit is set to 1.
Self-Refreshing: A self-refresh mode (battery backup mode) is provided for DRAM as a kind of standby mode. In this
mode, refresh timing and refresh addresses are generated within the DRAM.
To select self-refreshing, set the RFSHE bit and RMODE bit in DRAMCR to 1. Then, when a SLEEP instruction is
executed to enter software standby mode, the CAS and RAS signals are output and DRAM enters self-refresh mode, as
shown in figure 6-27.
When software standby mode is exited, the RMODE bit is cleared to 0 and self-refresh mode is cleared.
When switching to software standby mode, if there is a CBR refresh request, CBR refreshing is executed before self-
refresh mode is entered.
Rev.6.00 Oct.28.2004 page 148 of 1016
REJ09B0138-0600H
CSn, (RAS)
CAS, LCAS
Figure 6-26 CBR Refresh Timing (When RCW = 1, RLW1 = 0, RLW0 = 1)
CAS, LCAS
Note: n = 2 to 5
CS, (RAS)
ø
Note: n = 2 to 5
ø
T
Rp
Figure 6-25 CBR Refresh Timing
T
Rp
T
Rr
T
Rr
T
Rc1
T
Rc1
T
Rw
T
Rc2
T
Rc2