DF2398F20V Renesas Electronics America, DF2398F20V Datasheet - Page 756

• Manufacturer Part Number: DF2398F20V
• Description: IC H8S/2300 MCU FLASH 128QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2398F20V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 87
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 128-QFP
• For Use With: YR0K42378FC000BA - KIT EVAL FOR H8S/2378
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Table 22-22 Flash Memory Characteristics (HD64F2398F20T, HD64F2398TE20T)
Conditions:
Notes: 1. Settings of each time must comply with algorithm of writing/erasing.
Rev.6.00 Oct.28.2004 page 726 of 1016
REJ09B0138-0600H
2. Writing time for 128 bytes: indicates the total period in which bit P of flash memory control register 1 (FLMCR1)
3. Erasing time for one block: indicates the period in which bit E of FLMCR1 is set. Erasing verification time is not
4. Maximum writing time: t
is set. Writing verification time is not included.
included.
Item
Programming time*
Erase time*
Reprogramming count
Programming Wait time after SWE bit setting*
Erase
V
T
(Programming/erasing operating temperature, wide-range specifications)
a
CC
= 0 to +75 C (Programming/erasing operating temperature, regular specifications), T
= 5.0 V 10%, AV
1
*
3
Wait time after PSU bit setting*
Wait time after P bit setting*
Wait time after P bit clear*
Wait time after PSU bit clear*
Wait time after PV bit setting*
Wait time after H'FF dummy
write*
Wait time after PV bit clear*
Wait time after SWE bit clear*
Maximum programming
count*
Wait time after SWE bit
setting*
Wait time after ESU bit
setting*
Wait time after E bit setting*
Wait time after E bit clear*
Wait time after ESU bit clear*
Wait time after EV bit setting*
Wait time after H’FF dummy
write*
Wait time after EV bit clear*
Wait time after SWE bit clear*
Maximum erase count*
*
6
1
*
1
1
1
2
*
*
1
1
4
4
P
(max) =
CC
= 5.0 V 10%, V
wait time (z) after setting of bit P
1
*
6
1
1
1
1
1
1
*
*
1
1
1
1
1
1
4
6
1
1
Symbol Min
t
t
N
x
y
z (z1)
N
x
y
z
N
P
E
ref
WEC
(z2)
(z3)
= 4.5 V to AV
—
—
—
1
50
—
—
—
5
5
4
2
2
100
—
1
100
—
10
10
20
2
4
100
—
Typ
10
50
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
CC
, V
Max
200
1000
1000
—
—
30
200
10
—
—
—
—
—
—
1000*
—
—
10
—
—
—
—
—
—
100
SS
= AV
5
SS
Unit
ms/128
bytes
ms/block
Times
Times
ms
Times
s
s
s
s
s
s
s
s
s
s
s
s
s
s
s
s
s
s
= 0V
Test
Condition
s1
7
Additional
program-
ming wait
Erase time
wait
n
a
n
= 0 to + 85 C
1000
6