AT91SAM7S128C-MU Atmel, AT91SAM7S128C-MU Datasheet - Page 554

IC MCU ARM7 128K FLASH 64-QFN

AT91SAM7S128C-MU

Manufacturer Part Number
AT91SAM7S128C-MU
Description
IC MCU ARM7 128K FLASH 64-QFN
Manufacturer
Atmel
Series
AT91SAMr
Datasheets

Specifications of AT91SAM7S128C-MU

Core Processor
ARM7
Core Size
16/32-Bit
Speed
55MHz
Connectivity
I²C, SPI, SSC, UART/USART, USB
Peripherals
Brown-out Detect/Reset, DMA, POR, PWM, WDT
Number Of I /o
32
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
1.65 V ~ 1.95 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
64-VQFN Exposed Pad, 64-HVQFN, 64-SQFN, 64-DHVQFN
Core
ARM7TDMI
For Use With
AT91SAM-ICE - EMULATOR FOR AT91 ARM7/ARM9AT91SAM7S-EK - KIT EVAL FOR ARM AT91SAM7S
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
 Details
Other names
AT91SAM7S128-MU
AT91SAM7S128-MU

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AT91SAM7S128C-MU
Manufacturer:
ATMEL
Quantity:
670
37.2
The following characteristics are applicable to the operating temperature range: T
specified.
Table 37-2.
554
Symbol
V
V
V
V
V
V
V
V
I
I
I
C
LEAK
PULLUP
PULLDOWN
VDDCORE
VDDPLL
VDDIO
VDDFLASH
IL
IH
OL
OH
IN
DC Characteristics
AT91SAM7S Series Preliminary
Parameter
DC Supply Core
DC Supply PLL
DC Supply I/Os
DC Supply Flash
Input Low-level Voltage
Input High-level Voltage
Output Low-level Voltage
Output High-level Voltage
Input Leakage Current
Input Pull-up Current
Input Pull-down Current,
(TST, ERASE, JTAGSEL)
Input Capacitance
DC Characteristics
Conditions
V
V
V
V
I
I
I
I
I
I
I
I
PA0-PA3, Pull-up resistors disabled
(Typ: T
Other PIOs, Pull-up resistors disabled
(Typ: T
PA17-PA20, V
PAx connected to ground
PA17-PA20, V
PAx connected to ground
Other PIOs and NRST, V
PAx connected to ground
Other PIOs and NRST, V
PAx connected to ground
V
Pins connected to V
V
Pins connected to V
48 or 64 LQFP Package
O
O
O
O
O
O
O
O
VDDIO
VDDIO
VDDIO
VDDIO
VDDIO
VDDIO
= 8 mA, V
= 0.3 mA, (CMOS) V
= 1.5 mA, V
= 0.3 mA, (CMOS) V
= 8 mA, V
= 0.3 mA, (CMOS) V
= 1.5 mA, V
= 0.3 mA, V
A
A
from 3.0V to 3.6V
from 1.65V to 1.95V
from 3.0V to 3.6V
from 1.65V to 1.95V
from 3.0V to 3.6V,
from 1.65V to 1.95V,
= 25°C, Max: T
= 25°C, Max: T
VDDIO
VDDIO
VDDIO
VDDIO
VDDIO
VDDIO
VDDIO
from 3.0V to 3.6V
from 3.0V to 3.6V
from 3.0V to 3.6V,
from 1.65V to 1.95V,
from 1.65V to 1.95V
from 1.65V to 1.95V
(CMOS) from 1.65V to 1.95V
VDDIO
VDDIO
VDDIO
VDDIO
VDDIO
A
A
= 85°C)
= 85°C)
VDDIO
VDDIO
from 3.0V to 3.6V
from 1.65V to 1.95V
from 3.0V to 3.6V
from 3.0V to 3.6V,
from 1.65V to 1.95V,
A
0.6 x V
V
V
V
V
= -40°C to 85°C unless otherwise
DDIO
DDIO
DDIO
DDIO
1.65
1.65
1.65
2.46
Min
-0.3
-0.3
143
135
3.0
3.0
2.0
10
25
30
- 0.1
- 0.1
- 0.4
- 0.2
VDDIO
20.6
5.15
Typ
321
295
40
20
75
67
6175K–ATARM–30-Aug-10
Max
1.95
1.95
1.95
0.45
11.5
13.9
400
200
600
100
550
130
3.6
3.6
0.8
5.5
5.5
0.4
0.1
0.2
0.1
60
Units
nA
nA
µA
µA
µA
µA
µA
µA
pF
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V

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