AT91SAM7S128C-MU Atmel, AT91SAM7S128C-MU Datasheet - Page 626

• Manufacturer Part Number: AT91SAM7S128C-MU
• Description: IC MCU ARM7 128K FLASH 64-QFN
• Manufacturer: Atmel
• Series: AT91SAMr

Specifications of AT91SAM7S128C-MU

• Core Processor: ARM7
• Core Size: 16/32-Bit
• Speed: 55MHz
• Connectivity: I²C, SPI, SSC, UART/USART, USB
• Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
• Number Of I /o: 32
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 1.65 V ~ 1.95 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-VQFN Exposed Pad, 64-HVQFN, 64-SQFN, 64-DHVQFN
• Core: ARM7TDMI
• For Use With: AT91SAM-ICE - EMULATOR FOR AT91 ARM7/ARM9AT91SAM7S-EK - KIT EVAL FOR ARM AT91SAM7S
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details
• Other names: AT91SAM7S128-MU; AT91SAM7S128-MU

40.7.2.11
40.7.3
40.7.3.1
40.7.4
40.7.4.1
40.7.4.2
626
AT91SAM7S Series Preliminary
Non Volatile Memory Bits (NVM Bits)
Parallel Input/Output Controller (PIO)
ADC: Sleep Mode
NVM Bits: Write/Erase Cycles Number
PIO: Leakage on PA17 - PA20
PIO: Electrical Characteristics on NRST and PA0-PA16 and PA21-31
None.
If Sleep mode is activated while there is no activity (no conversion is being performed), it will
take effect only after a conversion occurs.
To activate sleep mode as soon as possible, it is recommended to write successively, ADC
Mode Register (SLEEP) then ADC Control Register (START bit field); to start an analog-to-digi-
tal conversion, in order put ADC into sleep mode at the end of this conversion.
The maximum number of write/erase cycles for Non Volatile Memory bits is 100. This includes
Lock Bits (LOCKx), General Purpose NVM bits (GPNVMx) and the Security Bit.
This maximum number of write/erase cycles is not applicable to 256 KB Flash memory, it
remains at 10K for the Flash memory.
None.
When PA17, PA18, PA19 or PA20 (the I/O lines multiplexed with the analog inputs) are set as
digital inputs with pull-up disabled, the leakage can be 9 µA in worst case and 90 nA in typical
case per I/O when the I/O is set externally at low level.
Set the I/O to VDDIO by internal or external pull-up.
When NRST or PA0-PA16 or PA21-PA31 are set as digital inputs with pull-up enabled, the volt-
age of the I/O stabilizes at VPull-up.
Vpull-up
This condition causes a leakage through VDDIO. This leakage is 45 µA per pad in worst case at
3.3 V and 25 µA at 1.8V.
I Leakage
VPull-up Min
VDDIO - 0.65 V
Parameter
I Leakage at 3,3V
I Leakage at 1.8V
Problem Fix/Workaround
Problem Fix/Workaround
Problem Fix/Workaround
Problem Fix/Workaround
VPull-up Max
VDDIO - 0.45 V
Typ
2.5
1
µA
µA
Max
45
25
µA
µA
6175K–ATARM–30-Aug-10