MCF5407AI220 Freescale Semiconductor, MCF5407AI220 Datasheet - Page 273

• Manufacturer Part Number: MCF5407AI220
• Description: IC MPU 32B 220MHZ COLDF 208-FQFP
• Manufacturer: Freescale Semiconductor
• Series: MCF540xr

Specifications of MCF5407AI220

• Core Processor: Coldfire V4
• Core Size: 32-Bit
• Speed: 220MHz
• Connectivity: EBI/EMI, I²C, UART/USART
• Peripherals: DMA, WDT
• Number Of I /o: 16
• Program Memory Type: ROMless
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 1.65 V ~ 3.6 V
• Oscillator Type: External
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 208-FQFP
• Maximum Clock Frequency: 220 MHz
• Operating Supply Voltage: 1.8 V, 3.3 V
• Maximum Operating Temperature: + 105 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: 0 C
• Program Memory Size: 24KB
• Cpu Speed: 220MHz
• Embedded Interface Type: I2C, UART
• Digital Ic Case Style: FQFP
• No. Of Pins: 208
• Supply Voltage Range: 3.3V
• Rohs Compliant: Yes
• For Use With: M5407C3 - KIT EVAL FOR MCF5407 W/ETHERNET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -
• Data Converters: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Table 11-3 describes DCR fields.
11.3.2.2 DRAM Address and Control Registers (DACR0/DACR1)
DACR0 and DACR1, Figure 11-3, contain the base address compare value and the control
bits for memory blocks 0 and 1. Address and timing are also controlled by these registers.
Memory areas defined for each block should not overlap; operation is undefined for
accesses in overlapping regions.
15
14
13
12–11
10–9
8–0
Address
Bits
Reset
Field SO
R/W
Name
NAM
RRA
RRP
SO
RC
—
15
Figure 11-2. DRAM Control Register (DCR) (Asynchronous Mode)
0
Synchronous operation. Selects synchronous or asynchronous mode. A DRAM controller in
synchronous mode can be switched to ADRAM mode only by resetting the MCF5407.
0 Asynchronous DRAMs. Default at reset.
1 Synchronous DRAMs
Reserved, should be cleared.
No address multiplexing. Some implementations require external multiplexing. For example, when
linear addressing is required, the DRAM should not multiplex addresses on DRAM accesses.
0 The DRAM controller multiplexes the external address bus to provide column addresses.
1 The DRAM controller does not multiplex the external address bus to provide column addresses.
Refresh RAS asserted. Determines how long RAS is asserted during a refresh operation.
00 2 clocks
01 3 clocks
10 4 clocks
11 5 clocks
Refresh RAS precharge. Controls how many clocks RAS is precharged after a refresh operation
before accesses are allowed to DRAM.
00 1 clock
01 2 clocks
10 3 clocks
11 4 clocks
Refresh count. Controls refresh frequency. The number of bus clocks between refresh cycles is
(RC + 1) * 16. Refresh can range from 16–8192 bus clocks to accommodate both standard and
low-power DRAMs with bus clock operation from less than 2 MHz to greater than 50 MHz.
The following example calculates RC for an auto-refresh period for 4096 rows to receive 64 mS of
refresh every 15.625 µs for each row (625 bus clocks at 40 MHz).
# of bus clocks = 625 = (RC field + 1) * 16
RC = (625 bus clocks/16) -1 = 38.06, which rounds to 38; therefore, RC = 0x26.
Table 11-3. DCR Field Descriptions (Asynchronous Mode)
14
—
NAM
13
Chapter 11. Synchronous/Asynchronous DRAM Controller Module
12
RRA
11
10
RRP
9
MBAR + 0x100
8
Uninitialized
Description
R/W
RC
Asynchronous Operation
11-5
0