DF2398TE20 Renesas Electronics America, DF2398TE20 Datasheet - Page 176

IC H8S MCU FLASH 256K 120TQFP

DF2398TE20

Manufacturer Part Number
DF2398TE20
Description
IC H8S MCU FLASH 256K 120TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets

Specifications of DF2398TE20

Core Processor
H8S/2000
Core Size
16-Bit
Speed
20MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
87
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
120-TQFP, 120-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2398TE20
HD64F2398TE20

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2398TE20V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Rev.6.00 Oct.28.2004 page 146 of 1016
REJ09B0138-0600H
RAS up mode
To select RAS up mode, clear the RCDM bit in MCR to 0. Each time access to DRAM space is interrupted and
another space is accessed, the RAS signal goes high again. Burst operation is only performed if DRAM space is
continuous. Figure 6-22 shows an example of the timing in RAS up mode.
In the case of burst ROM space access, the RAS signal is not restored to the high level.
CAS, LCAS
Note: n = 2 to 5
CSn, (RAS)
D
A
15
23
to D
to A
ø
0
0
Figure 6-22 Example of Operation Timing in RAS Up Mode
T
p
DRAM access
T
r
T
c1
T
c2
DRAM access
T
c1
T
c2
External space
T
1
access
T
2

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