DF2398TE20 Renesas Electronics America, DF2398TE20 Datasheet - Page 179

IC H8S MCU FLASH 256K 120TQFP

DF2398TE20

Manufacturer Part Number
DF2398TE20
Description
IC H8S MCU FLASH 256K 120TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets

Specifications of DF2398TE20

Core Processor
H8S/2000
Core Size
16-Bit
Speed
20MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
87
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
120-TQFP, 120-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2398TE20
HD64F2398TE20

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2398TE20V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
6.6
When burst mode is selected with the DRAM interface, the DACK output timing can be selected with the DDS bit. When
DRAM space is accessed in DMAC single address mode at the same time, whether or not burst access is to be performed
is selected.
6.6.1
Burst access is performed by determining the address only, irrespective of the bus master. The DACK output goes low
from the T
Figure 6-28 shows the DACK output timing for the DRAM interface when DDS = 1.
DMAC Single Address Mode and DRAM Interface
When DDS = 1
C1
state in the case of the DRAM interface.
CSn, (RAS)
CAS, LCAS
HWR, (WE)
Figure 6-27 Self-Refresh Timing (When CW2 = 1, or CW2 = 0 and LCASS = 0)
Note: n = 2 to 5
Figure 6-28 DACK Output Timing when DDS = 1 (Example of DRAM Access)
Read
Write
ø
LCAS, (LCAS)
CAS, (UCAS),
HWR, (WE)
HWR, (WE)
CSn, (RAS)
T
Rp
D
D
Note: n = 2 to 5
A
15
15
23
DACK
to D
to D
to A
ø
0
0
0
T
Rcr
T
p
High
Row
T
r
T
Software
c1
standby
Column
Rev.6.00 Oct.28.2004 page 149 of 1016
T
c2
T
Rc3
REJ09B0138-0600H

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