DF2398TE20 Renesas Electronics America, DF2398TE20 Datasheet - Page 796

• Manufacturer Part Number: DF2398TE20
• Description: IC H8S MCU FLASH 256K 120TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2398TE20

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 87
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 120-TQFP, 120-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2398TE20; HD64F2398TE20

Notes: 1. Set the times according to the program/erase algorithms.
Table 22-43 shows the flash memory characteristics.
Table 22-43 Flash Memory Characteristics (2)
Conditions:
Rev.6.00 Oct.28.2004 page 766 of 1016
REJ09B0138-0600H
2. Programming time per 32 bytes (Shows the total time the flash memory control register 1 (FLMCR1) is set. It
3. Block erase time (Shows the period the E bit in FLMCR1 is set. It does not include the erase verification time.)
4. Maximum programming time
5. Number of times when the wait time after P bit setting (z) = 200 s.
6. For the maximum erase time (t
does not include the programming verification time.)
(t
The maximum number of writes (N) should be set according to the actual set value of z so as not to exceed the
maximum programming time (t
(z) and the maximum number of erases (N):
t
The values of z and N should be set so as to satisfy the above formula.
Examples: When z = 5 [ms], N = 240 times
Item
Programming Wait time after PV bit clear*
Erase
E
Item
Programming time*
Erase time*
Reprogramming count
p
(max) = Wait time after E bit setting (z) maximum number of erases (N)
(max)=wait time after P-bit setting (z)
V
T
(Programming/erasing operating temperature, wide-range specifications)
a
CC
=0 to +75 C (Programming/erasing operating temperature, regular specifications), T
= 3.0 to 3.6 V, AV
When z = 10 [ms], N = 120 times
1
*
3
Maximum programming
count*
Wait time after SWE bit
setting*
Wait time after ESU bit
setting*
Wait time after E bit
setting*
Wait time after E bit clear*
Wait time after ESU bit
clear*
Wait time after EV bit
setting*
Wait time after H’FF dummy
write*
Wait time after EV bit clear*
Maximum erase count*
*
5
1
*
1
1
1
2
*
*
1
1
1
1
4
*
4
6
CC
= 3.0 to 3.6 V, V
P
E
(max)).
(max)), the following relationship applies between the wait time after E bit setting
1
*
6
1
maximum programming count (N))
1
1
Symbol Min
N
x
y
z
N
Symbol Min
t
t
N
P
E
WEC
ref
= 3.0 V to AV
4
—
10
200
5
10
10
20
2
5
120
—
—
—
Typ
—
—
—
—
—
—
—
—
—
—
—
Typ
10
100
—
CC
, V
Max
—
1000*
—
—
10
—
—
—
—
—
240
Max
200
1200 ms/block
100
SS
=AV
5
Unit
ms/32 bytes
Times
Unit
Times
ms
Times
SS
s
s
s
s
s
s
s
s
=0V
Test
Condition
z = 200 s
Test
Condition
a
=0 to +85 C