MC68HC711E9FU Freescale Semiconductor, MC68HC711E9FU Datasheet - Page 54

• Manufacturer Part Number: MC68HC711E9FU
• Manufacturer: Freescale Semiconductor

Specifications of MC68HC711E9FU

• Cpu Family: HC11
• Device Core Size: 8b
• Frequency (max): 4MHz
• Interface Type: SCI/SPI
• Program Memory Type: EPROM
• Program Memory Size: 12KB
• Total Internal Ram Size: 512Byte
• # I/os (max): 38
• Number Of Timers - General Purpose: 8
• Operating Supply Voltage (typ): 3.3/5V
• Operating Supply Voltage (max): 5.5V
• Operating Supply Voltage (min): 3V
• On-chip Adc: 8-chx8-bit
• Instruction Set Architecture: CISC
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 64
• Package Type: PQFP
• Lead Free Status / Rohs Status: Not Compliant

Operating Modes and On-Chip Memory
EPGM — EPROM/OTPROM/EEPROM Programming Voltage Enable Bit
During EEPROM programming, the ROW and BYTE bits of PPROG are not used. If the frequency of the
E clock is 1 MHz or less, set the CSEL bit in the OPTION register. Recall that 0s must be erased by a
separate erase operation before programming. The following examples of how to program an EEPROM
byte assume that the appropriate bits in BPROT are cleared.
2.5.1.3 EEPROM Bulk Erase
This is an example of how to bulk erase the entire EEPROM. The CONFIG register is not affected in this
example.
2.5.1.4 EEPROM Row Erase
This example shows how to perform a fast erase of large sections of EEPROM.
54
PROG
BULKE
ROWE
0 = Programming voltage to EEPROM array switched off
1 = Programming voltage to EEPROM array switched on
LDAB
STAB
STAA
LDAB
STAB
JSR
CLR
LDAB
STAB
STAA
LDAB
STAB
JSR
CLR
LDAB
STAB
STAB
LDAB
STAB
JSR
CLR
#$02
$103B
$XXXX
#$03
$103B
DLY10
$103B
#$06
$103B
$XXXX
#$07
$103B
DLY10
$103B
#$0E
$103B
0,X
#$0F
$103B
DLY10
$103B
EELAT = 1
Set EELAT bit
Store data to EEPROM address
(for valid EEPROM address see memory
map for each device)
EELAT = 1, EPGM = 1
Turn on programming voltage
Delay 10 ms
Turn off high voltage and set
to READ mode
EELAT = 1, ERASE = 1
Set to BULK erase mode
Store data to any EEPROM address (for
valid EEPROM address see memory map
for each device)
EELAT = 1, EPGM = 1, ERASE = 1
Turn on high voltage
Delay 10 ms
Turn off high voltage and set
to READ mode
ROW = 1, ERASE = 1, EELAT = 1
Set to ROW erase mode
Write any data to any address in ROW
ROW = 1, ERASE = 1, EELAT = 1, EPGM = 1
Turn on high voltage
Delay 10 ms
Turn off high voltage and set
to READ mode
M68HC11E Family Data Sheet, Rev. 5.1
Freescale Semiconductor