ATmega16HVB Atmel Corporation, ATmega16HVB Datasheet - Page 209

• Manufacturer Part Number: ATmega16HVB
• Manufacturer: Atmel Corporation

Specifications of ATmega16HVB

• Flash (kbytes): 16 Kbytes
• Pin Count: 44
• Max. Operating Frequency: 8 MHz
• Cpu: 8-bit AVR
• # Of Touch Channels: 8
• Hardware Qtouch Acquisition: No
• Max I/o Pins: 17
• Ext Interrupts: 15
• Usb Speed: No
• Usb Interface: No
• Spi: 1
• Twi (i2c): 1
• Graphic Lcd: No
• Video Decoder: No
• Camera Interface: No
• Adc Channels: 8
• Adc Resolution (bits): 12
• Adc Speed (ksps): 1.9
• Resistive Touch Screen: No
• Temp. Sensor: Yes
• Crypto Engine: No
• Sram (kbytes): 1
• Eeprom (bytes): 512
• Self Program Memory: YES
• Dram Memory: No
• Nand Interface: No
• Picopower: No
• Temp. Range (deg C): -40 to 85
• I/o Supply Class: 4.0 to 25
• Operating Voltage (vcc): 4.0 to 25
• Fpu: No
• Mpu / Mmu: no / no
• Timers: 2
• Output Compare Channels: 4
• Input Capture Channels: 2
• 32khz Rtc: No
• Calibrated Rc Oscillator: Yes

8042D–AVR–10/11
3. The serial programming instructions will not work if the communication is out of synchro-
4. The Flash is programmed one page at a time. The memory page is loaded one byte at a
5. A: The EEPROM array is programmed one byte at a time by supplying the address and
6. Any memory location can be verified by using the Read instruction which returns the con-
7. At the end of the programming session, RESET can be set high to commence normal
8. Power-off sequence (if needed):
Table 30-11. Minimum wait delay before writing the next flash or EEPROM location.
Symbol
t
t
t
t
WD_FLASH
WD_EEPROM
WD_ERASE
WD_FUSE
nization. When in sync. the second byte (0x53), will echo back when issuing the third
byte of the Programming Enable instruction. Whether the echo is correct or not, all four
bytes of the instruction must be transmitted. If the 0x53 did not echo back, give RESET a
positive pulse and issue a new Programming Enable command.
time by supplying the 5 LSB of the address and data together with the Load Program
memory Page instruction. To ensure correct loading of the page, the data low byte must
be loaded before data high byte is applied for a given address. The Program memory
Page is stored by loading the Write Program memory Page instruction with the 7/8 MSB
of the address (Atmel ATmega16HVB/ATmega32HVB). If polling (RDY/BSY) is not used,
the user must wait at least t
Accessing the serial programming interface before the Flash write operation completes
can result in incorrect programming.
data together with the appropriate Write instruction. An EEPROM memory location is first
automatically erased before new data is written. If polling (RDY/BSY) is not used, the
user must wait at least t
chip erased device, no 0xFFs in the data file(s) need to be programmed.
B: The EEPROM array is programmed one page at a time. The Memory page is loaded
one byte at a time by supplying the 2 LSB of the address and data together with the Load
EEPROM Memory Page instruction. The EEPROM Memory Page is stored by loading
the Write EEPROM Memory Page Instruction with the 7/8 MSB of the address
(ATmega16HVB/ATmega32HVB). When using EEPROM page access only byte loca-
tions loaded with the Load EEPROM Memory Page instruction is altered. The remaining
locations remain unchanged. If polling (RDY/BSY) is not used, the used must wait at
least t
erased device, no 0xFF in the data file(s) need to be programmed.
tent at the selected address at serial output MISO.
operation.
Set RESET to “1”.
Turn V
WD_EEPROM
CC
power off.
before issuing the next page (see
WD_EEPROM
WD_FLASH
before issuing the next byte (see
before issuing the next page (see
ATmega16HVB/32HVB
Table 30-8 on page
Minimum wait delay
4.5ms
4.0ms
4.0ms
4.5ms
Table
Table
207). In a chip
30-11). In a
30-11).
209