ATmega324PA Atmel Corporation, ATmega324PA Datasheet - Page 303

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ATmega324PA

Manufacturer Part Number
ATmega324PA
Description
Manufacturer
Atmel Corporation
Datasheets

Specifications of ATmega324PA

Flash (kbytes)
32 Kbytes
Pin Count
44
Max. Operating Frequency
20 MHz
Cpu
8-bit AVR
# Of Touch Channels
16
Hardware Qtouch Acquisition
No
Max I/o Pins
32
Ext Interrupts
32
Usb Speed
No
Usb Interface
No
Spi
3
Twi (i2c)
1
Uart
2
Graphic Lcd
No
Video Decoder
No
Camera Interface
No
Adc Channels
8
Adc Resolution (bits)
10
Adc Speed (ksps)
15
Analog Comparators
1
Resistive Touch Screen
No
Temp. Sensor
No
Crypto Engine
No
Sram (kbytes)
2
Eeprom (bytes)
1024
Self Program Memory
YES
Dram Memory
No
Nand Interface
No
Picopower
Yes
Temp. Range (deg C)
-40 to 85
I/o Supply Class
1.8 to 5.5
Operating Voltage (vcc)
1.8 to 5.5
Fpu
No
Mpu / Mmu
no / no
Timers
3
Output Compare Channels
6
Input Capture Channels
1
Pwm Channels
6
32khz Rtc
Yes
Calibrated Rc Oscillator
Yes

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27.7
27.7.1
27.7.2
27.7.3
8272C–AVR–06/11
Parallel Programming
Enter Programming Mode
Considerations for Efficient Programming
Chip Erase
Table 27-13. Command Byte Bit Encoding
The following algorithm puts the device in parallel programming mode:
1. Apply 4.5 - 5.5V between V
2. Set RESET to “0” and toggle XTAL1 at least six times.
3. Set the Prog_enable pins listed in
4. Apply 11.5 - 12.5V to RESET. Any activity on Prog_enable pins within 100 ns after +12V
5. Wait at least 50 µs before sending a new command.
The loaded command and address are retained in the device during programming. For efficient
programming, the following should be considered.
• The command needs only be loaded once when writing or reading multiple memory locations.
• Skip writing the data value 0xFF, that is the contents of the entire EEPROM (unless the
• Address high byte needs only be loaded before programming or reading a new 256 word
The Chip Erase will erase the Flash and EEPROM
not reset until the program memory has been completely erased. The Fuse bits are not
changed. A Chip Erase must be performed before the Flash and/or EEPROM are
reprogrammed.
Note:
Load Command “Chip Erase”
EESAVE Fuse is programmed) and Flash after a Chip Erase.
window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes
reading.
100 ns.
has been applied to RESET, will cause the device to fail entering programming mode.
Command Byte
1. The EEPRPOM memory is preserved during Chip Erase if the EESAVE Fuse is programmed.
1000 0000
0100 0000
0010 0000
0001 0000
0001 0001
0000 1000
0000 0100
0000 0010
0000 0011
ATmega164A/PA/324A/PA/644A/PA/1284/P
Command Executed
Chip Erase
Write Fuse bits
Write Lock bits
Write Flash
Write EEPROM
Read Signature Bytes and Calibration byte
Read Fuse and Lock bits
Read Flash
Read EEPROM
CC
and GND.
Table 27-11 on page 302
(1)
memories plus Lock bits. The Lock bits are
to “0000” and wait at least
303

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