R4F24568NVFQV Renesas Electronics America, R4F24568NVFQV Datasheet - Page 1332

• Manufacturer Part Number: R4F24568NVFQV
• Description: MCU 128KKB FLASH 48K 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2400r

Specifications of R4F24568NVFQV

• Core Processor: H8S/2600
• Core Size: 16/32-Bit
• Speed: 32MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, SSU, UART/USART, USB
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 96
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 48K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 26 Electrical Characteristics
Table 26.14 USB PLL Characteristics
Conditions: V
26.1.7
Table 26.15 Flash Memory Characteristics
Conditions:
Notes:
Page 1302 of 1392
Item
PLL for USB: oscillation
stabilization time
Item
Programming and erase
count*
Programming time
(per 4 bytes)
Erase time (per 1 block)
Programming and erase
voltage
Read voltage
Access state
1
1. When programming is to be performed multiple times on a system, reduce the effective number of
2. If an erase error occurs during erasure, execute the clear status command and then the erase
Flash Memory Characteristics
programming operations by shifting the writing addresses in sequence and so on until the
remaining blank area is as small as possible and only then erasing the entire block once. For
example, if sets of 16 bytes are being programmed, erasing the block once after programming the
maximum number of sets (256) minimizes the effective number of programming operations.
We recommend keeping information on the number of times erasure is performed for each block,
and setting up the limit on the number of times.
command at least 3 times until the erase does not recur.
V
V
φ = 8 MHz to 33 MHz
CC
SS
CC
= 3.0 V to 3.6 V, AV
= AV
= 3.0 to 3.6V, AV
SS
Symbol
= 0V, EXTAL = 8 to 16 MHz
Symbol
t
USOSC
Test
conditions Applicable area
⎯
CC
CC
= 3.0 to 3.6V, V
Min
1
= 3.0 V to 3.6, V
User ROM
Data flash area
User ROM
Data flash area
User ROM
Data flash area
User ROM
Data flash area
User ROM
Data flash area
User ROM
Data flash area
Max
⎯
ref
= 3.0 V to AV
ref
= 3.0 V to AV
3.0
3.0
1
2
Standard value
Min.
1000*
10000*
⎯
⎯
⎯
⎯
H8S/2456, H8S/2456R, H8S/2454 Group
Unit
ms
2
2
CC
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
150
300
300
300
, V
CC
,
REJ09B0467-0350 Rev. 3.50
SS
Test Conditions
Figure 26.38
= AV
⎯
⎯
⎯
⎯
⎯
⎯
3.6
3.6
⎯
⎯
Max.
SS
= 0V,
Jul 07, 2010
Unit
Times
μs
ms
V
V
State