R4F24568NVFQV Renesas Electronics America, R4F24568NVFQV Datasheet - Page 309
R4F24568NVFQV
Manufacturer Part Number
R4F24568NVFQV
Description
MCU 128KKB FLASH 48K 144-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2400r
Specifications of R4F24568NVFQV
Core Processor
H8S/2600
Core Size
16/32-Bit
Speed
32MHz
Connectivity
EBI/EMI, I²C, IrDA, SCI, SSU, UART/USART, USB
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
96
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
48K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
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H8S/2456, H8S/2456R, H8S/2454 Group
In some synchronous DRAMs provided with a self-refresh mode, the interval between clearing
self-refreshing and the next command is specified. A setting can be made in bits TPCS2 to TPCS0
in REFCR to make the precharge time after self-refreshing from 1 to 7 states longer than the
normal precharge time. In this case, too, normal precharging is performed according to the setting
of bits TPC1 and TPC0 in DRACCR, and therefore a setting should be made to give the optimum
post-self-refresh precharge time, including this time. Figure 6.70 shows an example of the timing
when the precharge time after self-refreshing is extended by 2 states.
REJ09B0467-0350 Rev. 3.50
Jul 07, 2010
Precharge-sel
Address bus
SDRAMφ
CAS
RAS
CKE
WE
(TPC1 = 1, TPC0 = 0, RCW1 = 0, RCW0 = 0, RLW1 = 0, RLW0 = 0)
φ
PALL
T
Rp
SELF
Figure 6.69 Self-Refresh Timing
T
Rr
Software standby
NOP
Section 6 Bus Controller (BSC)
T
Rc2
Page 279 of 1392
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