R4F24568NVFQV Renesas Electronics America, R4F24568NVFQV Datasheet - Page 282

• Manufacturer Part Number: R4F24568NVFQV
• Description: MCU 128KKB FLASH 48K 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2400r

Specifications of R4F24568NVFQV

• Core Processor: H8S/2600
• Core Size: 16/32-Bit
• Speed: 32MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, SSU, UART/USART, USB
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 96
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 48K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

H8S/2456, H8S/2456R, H8S/2454 Group
Section 6 Bus Controller (BSC)
6.7.13
DMAC and EXDMAC Single Address Transfer Mode and DRAM Interface
When burst mode is selected on the DRAM interface, the DACK and EDACK output timing can
be selected with the DDS and EDDS bits in DRAMCR. When DRAM space is accessed in DMAC
or EXDMAC single address mode at the same time, these bits select whether or not burst access is
to be performed.
(1)
When DDS = 1 or EDDS = 1
Burst access is performed by determining the address only, irrespective of the bus master. With
the DRAM interface, the DACK or EDACK output goes low from the T
state.
c1
Figure 6.53 shows the DACK or EDACK output timing for the DRAM interface when DDS = 1 or
EDDS = 1.
Page 252 of 1392
REJ09B0467-0350 Rev. 3.50
Jul 07, 2010