UPD70F3713GC-8BS-A Renesas Electronics America, UPD70F3713GC-8BS-A Datasheet - Page 609

• Manufacturer Part Number: UPD70F3713GC-8BS-A
• Description: MCU 32BIT V850ES/LX2 64-LQFP
• Manufacturer: Renesas Electronics America
• Series: V850ES/Ix2r

Specifications of UPD70F3713GC-8BS-A

• Core Processor: RISC
• Core Size: 32-Bit
• Speed: 20MHz
• Connectivity: CSI, UART/USART
• Peripherals: LVD, PWM, WDT
• Number Of I /o: 39
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• Ram Size: 6K x 8
• Voltage - Supply (vcc/vdd): 3.5 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

dedicated flash memory programmer connecting to the target system.
18.1 Features
The
Caution For the electrical specifications related to the flash memory rewriting, refer to CHAPTER 19
The V850ES/IE2 is commonly used in the following development environments and mass production applications.
Instruction fetch to the flash memory can access 4 bytes in 1 clock.
Writing to the flash memory can be performed with it is mounted on the target system (on-board). Use the
Note In the
For altering software after the V850ES/IE2 is soldered onto the target system.
For data adjustment when starting mass production.
For differentiating software according to the specification in small scale production of various models.
For facilitating inventory management.
For updating software after shipment.
4-byte/1-clock access (when instruction is fetched)
Capacity: 128 KB/64 KB
Write voltage: Erase/write with a single power supply
Rewriting method
• Rewriting by communication with dedicated flash memory programmer via serial interface (on-board/off-board
• Rewriting flash memory by user program (self programming (
Flash memory write prohibit function supported (security function)
Safe rewriting
Interrupts can be acknowledged during self programming.
μ
programming)
PD70F3713 and 70F3714 incorporate 64 KB and 128 KB flash memories as the internal ROM.
by self programming is possible.
ELECTRICAL SPECIFICATIONS.
μ
PD70F3713, boot swap function cannot be used, but safe rewriting of the entire flash memory area
Note
of entire flash memory area by self programming using boot swap function (
CHAPTER 18 FLASH MEMORY
User’s Manual U17716EJ2V0UD
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PD70F3714 only))
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PD70F3714 only)
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